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Method for measuring material surface emissivity by virtue of thermal infrared imager rapidly

An infrared thermal imager and surface emissivity technology, applied in the direction of material thermal development, can solve the problems of cumbersome, poor operability, and time-consuming, and achieve the effect of ensuring detection accuracy, improving detection speed, and shortening test time.

Active Publication Date: 2014-03-26
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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Problems solved by technology

[0025] 1) Complicated operation and low efficiency
Method 1 needs to measure the emissivity of the black body, diffuse reflector and the surface to be tested respectively; method 2 needs to measure the north side surface at least two different temperatures, which involves heating up and constant temperature of the heating device time, it takes longer
Method 3 requires changing the temperature of the environment, and it takes longer to change and stabilize the environment temperature, which is unacceptable for industrial production applications;
[0026] 2) Poor maneuverability
However, its efficiency is still low and cannot meet the needs of product testing in the industrial production field
[0028] After retrieval, the application number is 201310047855.5, a material emissivity measurement method based on an infrared thermometer. This measurement method is aimed at the emissivity measurement method of a certain point of a homogeneous material. This method is limited by the complex structure and steps used. It is cumbersome and is not suitable for the needs of emissivity measurement in the field of industrial production, and this method is only a point measurement method, which cannot be used for the needs of surface element infrared temperature measurement of infrared thermal imaging cameras
The two patents with application numbers of 201010529042.6 and 201010562419.8 are methods and devices for measuring the emissivity of material surfaces. The methods and devices given in them are based on complex and unique structures, which cannot meet the temperature requirements of complex measured surface production conditions. The demand for detection is poor in versatility, and it is basically impossible to apply it to the field of infrared thermal imaging temperature measurement. The measurement process is complicated and cumbersome, and it cannot meet the needs of rapid temperature detection in the industrial production field.
[0029] None of the methods in the above three patents can meet the needs of infrared thermal imager emissivity measurement, nor can it perform one-time accurate measurement of complex material surface emissivity. The method or device for measuring the surface emissivity of complex materials has been reported

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  • Method for measuring material surface emissivity by virtue of thermal infrared imager rapidly
  • Method for measuring material surface emissivity by virtue of thermal infrared imager rapidly
  • Method for measuring material surface emissivity by virtue of thermal infrared imager rapidly

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Embodiment Construction

[0046] The present invention proposes a rapid measurement method for surface emissivity of complex materials suitable for various infrared thermal imaging cameras. The method only needs to add an auxiliary black box structure to the infrared thermal imaging camera, and then adopts the testing method proposed by the present invention. The emissivity can be measured and calculated quickly on the surface of complex materials composed of multiple materials.

[0047] The method consists of two parts: hardware and software algorithms. The hardware part is: a structure of a black box 3 is added to the lens 2 of the infrared thermal imager 1, and its function is to form a black body, so that all the radiation received by the lens 2 comes from this structure; the algorithm is realized, and the thermal image The response of the instrument to the black box 3, the response of the infrared thermal imager 1 to the measured surface and the response of the infrared thermal imager 1 to the standa...

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Abstract

The invention discloses a method for measuring the material surface emissivity by a thermal infrared imager rapidly, and relates to the technical field of thermal infrared imaging temperature measurement. A thermal infrared imager, a black box and a heating platform are included. The method comprises the following testing steps: 1) acquiring the response of the black box by the thermal infrared imager under a temperature environment, wherein the process is enough once under the condition of invariable environment temperature, and storing data into a computer for preservation; 2) heating a measured objected to relatively high temperature greater than or equal to 70 DEG C generally, and acquiring the response of the measured object by the thermal infrared imager; 3) operating according to a formula, thereby obtaining an accurate emissivity measurement result. Regarding to the thermal infrared imager, according to the measurement method, only an auxiliary device is required to be added for the thermal infrared imager; the emissivity of complex material surfaces can be measured rapidly; the detection speed and the detection efficiency of emissivity of the thermal infrared imager are improved; meanwhile, the precision and reliability of the detection result are ensured; the using range of the thermal infrared imager is expanded.

Description

Technical field [0001] The invention relates to the technical field of infrared thermal imaging temperature measurement. Background technique [0002] As a non-destructive, non-contact temperature measurement device, infrared thermal imaging cameras are widely used in power electronics, construction, steel, microelectronics and other fields. The basic physical principle of infrared thermal imaging cameras is Planck's blackbody radiation law, which reveals the relationship between ideal blackbody radiation and temperature and wavelength. However, objects in reality are not black bodies. To measure the temperature of non-black bodies by infrared means, the emissivity of the surface of the measured object must first be obtained. This is the key prerequisite for accurate infrared temperature measurement. The emissivity measurement is not accurate, and the final infrared temperature measurement result is bound to be affected. [0003] Theoretically, the emissivity measurement is relat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N25/20
Inventor 翟玉卫梁法国郑世棋乔玉娥刘霞美
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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