Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solar component with protective layer

A solar module with a protective layer technology, applied in the field of solar modules, can solve the problems of low recombination rate and reduced lifespan of minority carriers on the surface of silicon wafers, and achieve high conversion efficiency, optimized graphic design, and high adhesion

Inactive Publication Date: 2014-03-12
JIANGSU GREEN POWER PV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The quality of crystalline silicon materials plays a vital role in the efficiency of solar cells. The surface defect density of crystalline silicon substrate materials is very high, such as a large number of dangling bonds, impurities, and broken bonds, etc., resulting in a greatly reduced minority carrier lifetime on the silicon wafer surface and a relatively low recombination rate. Low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar component with protective layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1)

[0016] See figure 1 , the present invention has negative electrode layer 1, N-type silicon layer 2, P-type silicon layer 3, positive electrode layer 4 and anti-reflection film layer 5 stacked in sequence; negative electrode layer 1 and positive electrode 1 are both silver layers, and on the surface of negative electrode layer 1 There is a main grid 11 formed by screen pattern printing and sub-gates 12 perpendicular to the main grid 11 and equally spaced; the positive layer 4 has a back electrode 41 and a back electric field 42; the anti-reflection film layer 5 is a silicon nitride layer , the anti-reflection film layer 5 is disposed between the negative electrode layer 1 and the N-type silicon layer 2 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a solar component with a protective layer. The solar component is provided with a negative electrode layer, an N-type silicon layer, a P-type silicon layer and a positive electrode layer which are laminated in turn. The solar component is also provided with an antireflection film layer which is arranged between the negative electrode layer and the N-type silicon layer. A PECVD deposition silicon nitride film is adopted to act as the antireflection film layer of the solar component so that a main effect of reducing reflection of light is achieved. Besides, the silicon nitride film comprises large amount of hydrogen so that passivation can be greatly performed on surface suspension keys in silicon, and thus carrier mobility can be enhanced.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar component with a protective layer. Background technique [0002] Solar cell modules, also called solar panels, are the core part of the solar power generation system and the most important part of the solar power generation system. A solar cell is a device that directly converts light energy into electrical energy through the photoelectric effect or photochemical effect. As a green energy source, solar cells are attracting more and more attention. The quality of crystalline silicon materials plays a vital role in the efficiency of solar cells. The surface defect density of crystalline silicon substrate materials is very high, such as a large number of dangling bonds, impurities, and broken bonds, etc., resulting in a greatly reduced minority carrier lifetime on the silicon wafer surface and a relatively low recombination rate. Low. Contents of the invention [00...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/0224
CPCH01B1/02H01L31/02168H01L31/022425H01L31/068Y02E10/547
Inventor 金刘
Owner JIANGSU GREEN POWER PV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products