A trench structure charge compensation Schottky semiconductor device and its manufacturing method

A charge compensation, conductive semiconductor technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve problems such as high on-resistance, cannot be used in high-voltage environments, and low forward turn-on voltage.

Active Publication Date: 2018-01-12
北海惠科半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have the disadvantages of large reverse leakage current and cannot be used in high-voltage environments.
[0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is planar layout, the traditional planar Schottky diode has a sudden electric field distribution curve in the drift region, which affects the reverse breakdown characteristics of the device, while the traditional The planar Schottky diode has a high on-resistance

Method used

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  • A trench structure charge compensation Schottky semiconductor device and its manufacturing method
  • A trench structure charge compensation Schottky semiconductor device and its manufacturing method
  • A trench structure charge compensation Schottky semiconductor device and its manufacturing method

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Embodiment 1

[0014] figure 1 It is a cross-sectional view of a trench structure charge compensation Schottky semiconductor device of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0015] A Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located near the inner wall of the trench, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 1E16 / CM 3 ; The pol...

Embodiment 2

[0024] figure 2 It is a cross-sectional view of a trench structure charge compensation Schottky semiconductor device of the present invention, combined below figure 2 The semiconductor device of the present invention will be described in detail.

[0025] A Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located near the inner wall of the trench, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 1E16 / CM 3 ; The p...

Embodiment 3

[0034] image 3 It is a cross-sectional view of a trench structure charge compensation Schottky semiconductor device of the present invention, combined below image 3 The semiconductor device of the present invention will be described in detail.

[0035] A Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located near the inner wall of the trench, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 1E16 / CM 3 ; The pol...

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PUM

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Abstract

The invention discloses a channel structure charge compensation Schottky semiconductor device. A channel structure is introduced into a charge compensation structure, when the semiconductor device receives a certain reverse bias, first conducting semiconductor materials and second conducting semiconductor materials inside and outside a channel can form charge compensation, and the reverse blocking property of the device is improved. The invention further provides a manufacturing method of the channel structure charge compensation Schottky semiconductor device.

Description

technical field [0001] The invention relates to a charge compensation Schottky semiconductor device with a trench structure, and also relates to a method for manufacturing the charge compensation Schottky semiconductor device with a trench structure. The semiconductor device of the present invention is a basic structure for manufacturing power rectifying devices. Background technique [0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have disadvantages such as large reverse leakage current and cannot be used in high-voltage environments. [0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is planar layout, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/0634H01L29/66143H01L29/8725
Inventor 朱江
Owner 北海惠科半导体科技有限公司
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