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Dielectric film preparation method for improving capacity extraction rate of solid electrolyte tantalum capacitor

A technology of solid electrolyte and tantalum capacitors, which is applied in the direction of solid electrolytic capacitors, capacitor dielectric layers, capacitor parts, etc., can solve the problems of poor fluidity of tantalum powder, uneven pressing density, narrow pores of anode tantalum block, etc. efficiency, improve the effect of impregnation process

Active Publication Date: 2014-01-01
CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reason is that the particle size of the tantalum powder is extremely small (<2 μm), and the pores of the anode tantalum block are also very narrow. At the same time, due to the poor fluidity of the tantalum powder with small particle size, it is easy to cause uneven pressing density; therefore, it is difficult for the manganese nitrate solution to penetrate into the The pores inside the anode tantalum block form a manganese dioxide dielectric film

Method used

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  • Dielectric film preparation method for improving capacity extraction rate of solid electrolyte tantalum capacitor

Examples

Experimental program
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Effect test

Embodiment 1

[0015] 1) Press the tantalum powder with a specific volume of 70,000 V·μF / g into a 10V470μF anode tantalum block according to the conventional method;

[0016] 2) Sintering the anode tantalum block at high temperature according to the conventional method;

[0017] 3) Immerse the high-temperature sintered anode tantalum block in the manganese nitrate solution at a rate of 0.5 mm / min for 4 minutes, and the immersion depth is 1 / 4 of the height of the anode tantalum block;

[0018] 4) Immerse the above anode tantalum block in the above manganese nitrate solution at a speed of 1.5 mm / min for 3 minutes;

[0019] 5) Take out the anode tantalum block from the manganese nitrate solution at a speed of 1.5 mm / min, and then put it into the decomposition furnace to prepare the manganese dioxide dielectric film according to the conventional method.

Embodiment 2

[0021] The steps are the same as in Example 1; wherein, the immersion speed in step 3) is 1.5 mm / min, the holding time is 2 minutes, the immersion depth is 1 / 5 of the height of the anode tantalum block, and the immersion speed in step 4) is 0.5 mm / min, the retention time is 5 minutes, and the removal speed in step 5) is 0.5mm / min.

Embodiment 3

[0023] The steps are the same as in Example 1; wherein, the immersion speed in step 3) is 1 mm / min, the holding time is 3 minutes, the immersion depth is 1 / 5 of the height of the anode tantalum block, and the immersion speed in step 4) is 1 mm / min, the retention time is 4 minutes, and the removal speed in step 5) is 1mm / min.

[0024] In above-mentioned each embodiment, each technical parameter of described manganese nitrate solution is all identical with the manganese nitrate solution that traditional common method adopts.

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Abstract

The invention discloses a dielectric film preparation method for improving the capacity extraction rate of a solid electrolyte tantalum capacitor and aims to provide a method for uniformly preparing manganese dioxide dielectric films on surface of an anode tantalum block made of ultra-high specific volume tantalum powder so as to improve the capacity extraction rate of a capacitor. The method comprises the following steps: immersing the anode tantalum block in a manganese nitrate solution according to a speed of 0.5-1.5mm / min, and keeping 2-4 minutes, wherein the immersion depth is 1 / 5-1 / 4 of the height of the anode tantalum block; totally immersing the anode tantalum block into the manganese nitrate solution according to the speed of 0.5-1.5mm / min, and keeping 3-5 minutes; taking the anode tantalum block out of the manganese nitrate solution according to the speed of 0.5-1.5mm / min, and putting the anode tantalum block into a decomposing furnace for preparing the manganese dioxide dielectric films. According to the method, because an impregnation technology is improved, the capacity extraction rate of the capacitor can be improved; the method is a method for impregnating the solid electrolyte tantalum capacitor in a cathode solution.

Description

technical field [0001] The invention relates to a method for manufacturing a solid electrolyte tantalum capacitor, in particular to a method for preparing a dielectric film for improving the extraction rate of the capacity of the solid electrolyte tantalum capacitor. Background technique [0002] At present, the manufacturing method of solid electrolyte tantalum capacitors is to press tantalum powder into shape, and then sinter the anode tantalum block by high-temperature vacuum sintering, and immerse the anode tantalum block in manganese nitrate solution for 10-15 minutes to form a layer of manganese dioxide on the surface Dielectric film, then take out the anode tantalum block and put it into a metal case filled with liquid or gel working electrolyte for welding and packaging, and finally weld the anode lead wire. Capacitors manufactured by this traditional method can only adapt to the anode tantalum block made of tantalum powder with a specific capacity of ≤50,000 V·μF / g ...

Claims

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Application Information

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IPC IPC(8): H01G9/07H01G9/15
Inventor 张波吕林兴李露张志光黄奎
Owner CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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