Improved differential framework Nor flash storage unit based on serially-connected transistor type

Abstract

The invention discloses an improved differential framework Nor flash storage unit based on a serially-connected transistor type. The improved differential framework Nor flash storage unit comprises a two-transistor serial connection type Nor flash unit composed of a PMOS (P-channel Metal Oxide Semiconductor) transistor and a floating gate transistor, wherein a drain electrode of the floating gate transistor is connected with a source electrode of the PMOS transistor; particularly, one branch composed of the other two-transistor serial connection type Nor flash unit with the same composing structure is additionally arranged to form a differential symmetrical structure; bit lines of the two branches are used as a set of a differential pair to be input into a sensitive amplifier and are compared to read data. According to the improved differential framework Nor flash storage unit, a differential structure is adopted, the size of the transistor is reduced and the quantity of the transistors on the surface is increased for one time; the requirement on the transistors is reduced wholly and the area of the storage unit is not changed greatly; a manufacturing process is compatible with a traditional manufacturing process so that a design difficulty is reduced, low-capability application is realized, the area is reduced and the cost is reduced; with the adoption of a differential input scheme, a standard voltage source does not need to be arranged, so that a differentiable current range is expanded, the ranges of working voltage and temperatures are expanded and the reliability is enhanced.

Description

technical field [0001] The invention relates to the field of Nor flash memory, in particular to an improved differential architecture Nor flash storage unit based on series transistor type. Background technique [0002] NOR Flash is a non-volatile memory with large storage capacity and long data storage time. It can be erased and written up to 100,000 times, and its data update speed is much faster than that of EEPROM. It can save data and is often used to save some important configuration information. The application program can run directly in NOR F1ash, and the user does not have to read the code into RAM to run. NOR Flash has high transmission efficiency and is very cost-effective in small capacity. [0003] Intel first developed NOR flash technology in 1988. FLASH technology uses a special floating gate field effect transistor as a memory unit. The structure of this field effect tube is very different from that of ordinary field tubes. It has two gates, one is drawn...

AI Technical Summary

Problems solved by technology

The current difference between adjacent storage states of the device is very small, which reduces the reliability of the tube

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