Silicon ingot bonding method

Abstract

The invention relates to a silicon ingot bonding method, and belongs to the solar energy photovoltaic technology field. A technical scheme adopted by the silicon ingot bonding method comprises the following steps: 1, coating upper surfaces of silicon ingots with a glue layer, and bonding the glue layer with a glass pad strip; and 2, coating the metal pad strip with a glue layer after a glass pad strip and the silicon ingots are stably bonded, and pressing the glued surface of the metal pad strip on the glass pad strip. The silicon ingot bonding method is characterized in that the surfaces of the silicon ingots are glued and are bonded with the glass pad strip; and after the silicon ingots and the glass pad strip are stably bonded, the metal pad strip is glued, the metal pad strip is bonded on the glass pad strip to make the silicon ingots positioned at the bottom and the glass pad strip positioned at the upper portion of the silicon ingots, and bubbles generated by the glue layer between the silicon ingots and the glass pad strip upward overturns onto the surface of the glass pad strip from the original surfaces of the silicon ingots before initial curing, so the influences of the bubbles to the quality of the surfaces of the ingots are effectively avoided, and data comprising luminance edges, silicon drop and small edge breaking are reduced, thereby the slice yield is improved.

Description

technical field [0001] The invention belongs to the field of solar photovoltaic technology, and in particular relates to a method for bonding silicon ingots. Background technique [0002] In the process of silicon material processing, ingot bonding is a key process before slicing. Ingot bonding is usually done manually, and some of them are operated by ingot bonding equipment. After the silicon ingot is bonded, it is turned and sliced ​​at 180° . [0003] In the field of photovoltaic crystal ingot bonding, the operation mode of flipping after bonding is usually used, and the slicing process is performed after flipping. In today's trend of constant pursuit of low cost and high quality, improving the quality of slicing will directly affect its benefits. At present, under the normal operation mode of bonding the crystal ingot, during the bonding process, when the crystal ingot is bonded to the glass spacer, there are bubbles in the adhesive layer, and the formation of the bub...

AI Technical Summary

Problems solved by technology

At present, under the normal operation mode of bonding the crystal ingot, during the bonding process, when the crystal ingot is bonded to the glass spacer, there are bubbles in the adhesive layer, and the formation of the bubbles will produce bright edges, silicon Dropping, edge chipping and other defects will eventually lead to a decrease in the yield of the ingot

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