Method for preparing master alloy by crushing through using water quenching method

Abstract

The invention discloses a method for preparing a master alloy by crushing through using a water quenching method. The method comprises the following steps of: selecting a single crystal furnace, placing a quartz crucible into the single crystal furnace, closing the furnace to exhaust the furnace, electrifying the single crystal furnace for heating, placing a basket containing a master alloy silicon briquette into the furnace when the inner wall temperature of the quartz crucible reaches 750-800 DEG C, placing 25-30kg of 20mm-thick boron-containing silicon briquette into the quenching basket, lifting the basket into the furnace, and placing the basket in the quartz crucible with the basket bottom approaching to the bottom of the quartz crucible, wherein the temperature of the boron-containing silicon briquette approaches to 650 DEG C after heating for half of a hour; and rapidly lifting the quenching basket, turning on an auxiliary furnace chamber of the single crystal pulling furnace, sending the basket down, lifting the basket to separate the basket from a hook when the upper edge of the basket descends to leave the drum of the auxiliary furnace chamber, directly and rapidly sinking the basket into a cold rinse bank, and simultaneously heating another quenching basket containing the boron-containing silicon briquette in the single crystal furnace. The problem of difficult crushing is solved and the method has the characteristics that the raw material is saved, the cost is reduced, and the labor intensity is reduced.

Description

technical field [0001] The invention relates to a method for pulverizing and preparing master alloy by water quenching method. Background technique [0002] P-type silicon wafers and N-type silicon wafers are silicon-based materials used in solar cells, and P-type silicon wafer materials are currently the mainstream, accounting for a major share of the market. Whether it is a P-type polycrystalline silicon wafer or a single crystal silicon wafer, in order to make the doping amount easy to control and more accurate in the production process, so that the crystal resistivity of the grown crystal can meet the specified requirements, so a certain amount should be added according to the weight ratio. The amount of dopant, this dopant is also known as the master alloy. At present, the P-type dopants of silicon crystals are group III elements, mainly boron, gallium, etc., and the master alloy with boron as the main element uses the most units. [0003] The traditional method is to...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing master alloy by pulverizing by water quenching, which solves the problem of difficult crushing