Method for manufacturing high-voltage solid tantalum capacitor dielectric oxide film

Abstract

Disclosed in the invention is a method for manufacturing a high-voltage solid tantalum capacitor dielectric oxide film. An anode tantalum block that has been sintered and molded is immersed into a 10% to 50% of ethylene glycol solution and a dielectric oxide film is formed at the anode tantalum block by using an electrochemical oxidation way; the anode tantalum block is immersed into an organic solvent like benzene, dichlorobenzene, trichloro-benzenes, toluene, xylene, and propylene carbonate and the like for 10 to 20 seconds and then is taken out, wherein the organic solvent has a high boiling point that is over 100 DEG C and low viscosity and is insoluble in water; and after the residual solvent at the surface of the anode tantalum block is cleaned, the anode tantalum block is immersed into a 10% to 50% of ethylene glycol solution again and secondary forming is carried out by applying a voltage that is 10V to 50V higher than the voltage of the primary forming. After the primary and secondary forming, the dielectric oxide films with different thickness are formed at the inside and the surface of the anode tantalum bloc. On the premise that the volume is not reduced, the product forming voltage is improved, thereby improving the voltage-withstanding value of the product.

Description

technical field [0001] The invention relates to a method for manufacturing electronic components, in particular to a method for manufacturing a dielectric oxide film of a high-voltage solid tantalum capacitor. Background technique [0002] Formation is one of the key processes in the production of capacitors. The thickness of the dielectric oxide film is directly related to the formation time and voltage. During the formation process, the anode tantalum block is completely immersed in the electrolyte, and the oxidation process is non-selective. The anode tantalum block The immersion depth of each surface and interior of the can not be changed. The thickness of the dielectric oxide film formed during formation directly determines the capacity of the capacitor. As the thickness of the dielectric oxide film increases, the capacity will gradually decrease, and the rated voltage of the capacitor will increase accordingly. Under the same powder weight and specific capacity anode ...

AI Technical Summary

Problems solved by technology

None of the above existing technologies is aimed at solving the problem of "how to increase the rated voltage of the product without reducing the capacity of the capacitor", that is, it is not aimed at "forming a dielectric oxide film with a certain thickness without reducing the capacity, and can Selectively control the thickness of the dielectric oxide film in different parts of the anode tantalum block, especially strengthen the thickness of the dielectric oxide film formed on the surface of the tantalum wire and the anode tantalum block, and improve the withstand voltage value of the dielectric oxide film”