Field-effect transistor, edge structure and related manufacturing method

Abstract

A field effect transistor (“FET”), a termination structure and associated method for manufacturing. The FET has a plurality of active transistor cells and a termination structure. The termination structure for the FET includes a plurality of termination cells arranged substantially in parallel from an inner side toward an outer side of a termination area of the FET. Each of the termination cells comprises a termination trench lined with a termination insulation layer and filled with a termination conduction layer. The innermost termination cell is electrically coupled to gate regions of the active transistor cells while the rest of the termination cells are electrically floating.

Description

technical field [0001] Embodiments of the present disclosure relate to semiconductor devices, particularly but not limited to field effect transistors and methods of manufacturing the same. Background technique [0002] Semiconductor devices such as Metal Oxide Semiconductor Field Effect Transistor (MOSFET), Junction Field Effect Transistor (JFET) and Double Diffused Metal Oxide Semiconductor Field Effect Transistor (DMOS) have been widely used in the electronics industry. In some applications, such as power switches for switching voltage converters, field effect transistors should have good current handling capabilities, low on-resistance Rds ON , higher breakdown voltage BV and good safety and durability. [0003] Field effect transistors such as MOSFETs, JFETs, DMOSs, etc. are usually fabricated on a semiconductor substrate and have an active cell area and an edge area. The effective cell area includes at least one field effect transistor unit, has a gate area, a source...

AI Technical Summary

Problems solved by technology

Therefore, the existence of the strong electric field region on the left side of the leftmost trench type isolation unit 109 will cause the reverse breakdown voltage of the field effect transistor 10 to drift or decrease, which cannot meet the expected design requirements.

In addition, during use, the leftmost trench isolation unit 109 of the field effect transistor 10 may repeatedly withstand a strong voltage for a long time, so the reliability and durability will also be reduced, affecting the service life of the field effect transistor 10

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