A kind of LED heat dissipation substrate and its manufacturing method

A technology of a heat dissipation substrate and a manufacturing method, which is applied to electrical components, electric solid devices, circuits, etc., can solve the problems of reducing heat dissipation effect and poor heat dissipation performance, and achieves the effect of improving heat dissipation efficiency, avoiding heat dissipation bottlenecks, and high thermal conductivity.

Active Publication Date: 2015-12-09
GUANGDONG INST OF NEW MATERIALS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this scheme still involves Al 2 o 3 Ceramics (thermal conductivity 18-20W / mk) or AlN ceramics (thermal conductivity 170-230W / mk), which reduces the heat dissipation effect

Method used

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  • A kind of LED heat dissipation substrate and its manufacturing method
  • A kind of LED heat dissipation substrate and its manufacturing method
  • A kind of LED heat dissipation substrate and its manufacturing method

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Embodiment Construction

[0025] Such as Figure 1-Figure 3 As shown, the LED heat dissipation substrate of the present invention includes a substrate main body 1 made of a diamond-copper alloy material, and a groove 11 is opened on the substrate main body 1. The integrated diamond sheet 4 is connected by welding, and the upper surface of the diamond sheet 4 is provided with an electrode wire area 5 and a chip connection layer 6 for connecting the LED chip 8, and the chip connection layer 6 and the LED chip 8 are soldered. connected as one. Such as figure 1 As shown, only one LED chip 8 can be provided; as figure 2 and image 3 As shown, multiple LED chips 8 can be provided, and the arrangement and connection mode of each LED chip 8 can be adjusted according to actual needs;

[0026] The manufacturing method of the LED heat dissipation substrate of the present invention comprises the following steps:

[0027] Firstly, a groove 11 is opened on the substrate main body 1 made of diamond-copper alloy...

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Abstract

The invention provides an LED heat radiation substrate and a manufacturing method thereof. The LED heat radiation substrate is characterized by comprising a substrate main body made of diamond-copper alloy material, wherein a groove is formed in the substrate main body; a diamond chip is inlaid in the groove; and electrode wire areas and a chip connecting layer used for being connected with an LED chip are arranged on the upper surface of the diamond chip. According to the invention, as the structure that the diamond chip and the substrate main body made of the diamond-copper alloy material are combined to form the LED heat radiation substrate is adopted, the problem of heat radiation bottleneck of the current LED radiator due to introduction of an insulation layer is effectively solved; the diamond chip is closely inlaid in the groove formed in the substrate main body, so that the contact area of the diamond chip with the substrate main body is increased, and heat conducted to the diamond chip from the LED chip can be quickly conducted out; and meanwhile, the diamond chip and the substrate main body, and the LED chip and the diamond chip are respectively connected into a whole in a brazing manner, so that a dense alloy interface can be obtained, and thermal conductivity of the interface is high.

Description

technical field [0001] The invention belongs to the technical field of LED heat sinks, and in particular relates to an LED heat dissipation substrate with high thermal conductivity and a manufacturing method thereof. Background technique [0002] The full name of LED is semiconductor light-emitting diode, which can directly convert electrical energy into light energy. It is characterized by low power consumption, high brightness, bright colors, anti-vibration, long life, cold light source and so on. LED products are widely used, especially with the substantial increase in luminous efficiency and power, various products using LED as light source have penetrated into all walks of life. [0003] Semiconductor devices are usually very sensitive to temperature, especially for high-power LEDs, the temperature rise of the P-N junction is very obvious, and many applications require multiple high-power LEDs to be arranged in a dense matrix, and the heat dissipation problem is partic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/48H01L33/64H01L33/54
CPCH01L2224/48091
Inventor 韦春贝代明江候惠君林松盛胡芳石倩赵利曾威
Owner GUANGDONG INST OF NEW MATERIALS
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