Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resistor substrate and method for manufacturing same

A technology of resistance substrate and manufacturing method, applied in resistance manufacturing, resistors, resistor parts and other directions, can solve the problems of poor yield of resistance substrate 100, poor micro-miniature linear characteristics, easy generation of static electricity, etc., and achieve linear characteristics. Optimum, miniaturization, and the effect of reducing static electricity

Inactive Publication Date: 2013-08-14
ALPS ALPINE CO LTD
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0039] However, since the insulating layer 160 is provided on the upper surface of the insulating substrate 110 and the insulating properties of the insulating substrate 110 are improved, static electricity is easily generated and foreign matter such as dust is easily attracted.
[0040] When the resistor 120 is formed with foreign matter attached, the influence of the attached foreign matter will form a microscopic resistance substrate 100 with poor linearity characteristics, and there will be a problem that the yield of the resistance substrate 100 will deteriorate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistor substrate and method for manufacturing same
  • Resistor substrate and method for manufacturing same
  • Resistor substrate and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach ］

[0093] Hereinafter, the resistance substrate 1 in the first embodiment will be described.

[0094] First, use Figure 1 to Figure 2 The configuration of the resistor substrate 1 in this embodiment will be described. figure 1 is a diagram showing the structure of the resistor substrate 1, figure 1 (a) is a figure which shows the resistance board|substrate 1 from the upper side, figure 1 (b) means figure 1 (a) Diagram of section A-A shown. figure 2 yes figure 1 (b) Enlarged view of part B shown.

[0095] Such as figure 1 (a) and figure 1 As shown in (b), the resistor substrate 1 separates and arranges a resistor pattern 12 and a current collector pattern 13 on which a conductive slider BR slides on an insulating insulating substrate 11 and juxtaposes them. A pair of conductive electrode patterns 14 are respectively formed at both ends. In addition, connecting portions 16 are formed on the current collector pattern 13 and the pair of electrode patterns 14 so as t...

no. 2 Embodiment approach ］

[0148] Below, use Figure 4 The resistance substrate 2 in the second embodiment will be described.

[0149] Including the manufacturing process, the resistor substrate 2 is the same resistor substrate as the resistor substrate 1 of the first embodiment, but the sliding region of the slider BR is different.

[0150] In the first embodiment, the resistor pattern 12 located on the extended portion 14b is used as a non-sliding area where the slider BR does not slide, and the Figure 4 The shown range S1 is the sliding area of ​​the slider BR, but in the second embodiment, the resistor pattern 12 located on the extended portion 14b is included in the sliding area of ​​the slider BR, and the Figure 4 The range S2 shown serves as the sliding area of ​​the slider BR.

[0151] Hereinafter, effects brought about by employing this embodiment will be described.

[0152] In the resistor substrate 2 of the present embodiment, the resistor pattern 12 located on the extended portion 14b i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a resistor substrate which is miniature and has a good linear characteristic, and a method for manufacturing the same. The resistor substrate is configured in such a way that on an insulating substrate (11), a sliding resistor pattern (12) and a current collector pattern (13) of a sliding block (BR) are separated, and a pair of conducted electrode patterns (14) are arranged at the two ends of the resistor pattern (12) respectively, and in the resistor substrate (1), the resistor substrate (1) has an insulating pattern (15) that enables the pair of electrode patterns (14) to be connected and is arranged on the insulating substrate (11), the two ends of the insulating pattern (15) are overlapped on the pair of the electrode patterns (14), and the resistor pattern (12) is laminated on the insulating pattern (15) and the exposed parts (14a) of the pair of exposed electrode patterns (14) from the insulating pattern (15).

Description

[0001] technology area [0002] The present invention relates to a resistive substrate and a manufacturing method thereof, and particularly to a resistive substrate excellent in miniature linear characteristics (microliniarity characteristics) and a manufacturing method thereof. Background technique [0003] As a sensor for position detection, a varistor type sensor is used. Recently, in order to perform more fine-grained control of various electrical equipment, sensors with higher position detection accuracy than conventional ones are required. [0004] In order to realize a sensor for position detection with higher position detection accuracy than conventional ones, a resistor substrate with excellent linearity of output in a minute signal area, ie, a fine linearity characteristic, is required. [0005] Here, use Figure 7 Describes micro linear characteristics. Figure 7 It is a graph for explaining the micro linear characteristic, and it describes the case of a sliding se...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01C10/32H01C1/142H01C17/065
Inventor 角川修
Owner ALPS ALPINE CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com