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Method for processing silicon carbide sealing ring part by single electrode air plasma

A plasma and sealing ring technology, which is applied in electrical components, plasma welding equipment, metal processing equipment, etc., can solve the problem of difficult processing of silicon carbide sealing ring parts, and achieve good consistency in processing quality and stable and controllable processing , the effect of simple structure

Inactive Publication Date: 2013-08-07
HARBIN INST OF TECH
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Problems solved by technology

[0006] The purpose of the present invention is to provide a single-electrode atmospheric plasma processing method for silicon carbide sealing ring parts, in order to solve the difficult processing problem of silicon carbide sealing ring parts

Method used

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  • Method for processing silicon carbide sealing ring part by single electrode air plasma
  • Method for processing silicon carbide sealing ring part by single electrode air plasma
  • Method for processing silicon carbide sealing ring part by single electrode air plasma

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specific Embodiment approach 1

[0023] Specific implementation mode one: combine figure 1 , figure 2 , image 3 As shown, its steps are:

[0024] Step 1: Insulate and connect the upper end surface of the disc-shaped electrode holder 1 to the vertically moving working shaft 2-1 of the gantry processing machine tool 2, and a sheet-shaped electrode 1 is vertically arranged on the outer surface of the disc-shaped electrode holder 1 -1, the straight line where the sheet-shaped electrode 1-1 and the diameter of the disk-shaped electrode holder 1 are located is collinear, so that the sheet-shaped electrode 1-1 is connected to the output end of the radio frequency power supply 3 through the disk-shaped electrode holder 1 as atmospheric plasma discharge The anode of the anode; the air outlet hole 1-2 on the disc-shaped electrode frame 1 passes through the gas guide hole 1-3 in the center of the disc-shaped electrode frame 1, and the gas pipe 6-1 communicates with the mixed plasma gas source 6. The disc-shaped elec...

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Abstract

The invention relates to a method for processing a silicon carbide sealing ring part by single electrode air plasma, and belongs to the technical field of the processing of a silicon carbide sealing ring part by plasma, which aims at solving the problem of difficult processing of the silicon carbide sealing ring part. The method comprises the following steps of 1, vertically arranging a laminar electrode on the outer circular surface of a circular disc-shaped electrode rack; 2, clamping a to-be-processed silicon carbide sealing ring part on a ground electrode; 3, enabling the lower end surface of the laminar electrode to be close to the to-be-processed surface; 4, preheating a radio frequency power source and a mixed plasma air source; 5, delivering mixed gas, and starting the radio frequency power source; 6, controlling the movement track of the laminar electrode and the dwelling time on the part surface; and 7, taking out the to-be-processed silicon carbide sealing ring part. The method has the advantages that the high-precision and high-efficiency processing can be carried out on the sealing ring part surface which has more complicated and irregular surface microstructure shape and especially has no periodical repetitiveness in the circumferential direction.

Description

technical field [0001] The invention belongs to the technical field of plasma processing silicon carbide sealing ring parts. Background technique [0002] With the rapid development of modern science and technology, in nuclear industry, petroleum industry, chemical industry, chemical fiber, chemical fertilizer, atomic energy, aerospace and machinery manufacturing and other industrial fields, higher requirements are put forward for mechanical seals. [0003] Silicon carbide (SiC) has good chemical corrosion resistance, high strength, high hardness, good wear resistance, small friction coefficient, strong oxidation resistance, good dimensional stability at extremely high temperatures, low thermal expansion coefficient, and thermal stability Good sex. In addition, silicon carbide materials have the characteristics of moderate density, high specific stiffness, good thermal conductivity, thermal shock resistance, thermal shock resistance, isotropic mechanical properties, high el...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01J37/02B23K10/00H05H1/46C04B41/91
Inventor 王波金江姚英学金会良乔政李娜辛强李铎
Owner HARBIN INST OF TECH
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