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Preparation method of graphene on SiC substrate based on Cu film annealing and chlorine reaction

A graphene and annealing technology, applied in the field of microelectronics, can solve the problems of unstable carrier mobility, inability to use large-scale production, small graphene area, etc., and achieve easy control of thickness, fast reaction rate, and low porosity Effect

Inactive Publication Date: 2013-07-03
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The purpose of the present invention is to address the above-mentioned deficiencies in the prior art, and propose a method for preparing graphene on a SiC substrate based on Cu film annealing and chlorine reaction, so as to solve the problem that the graphene prepared by the prior art has a small area and cannot be used on a large scale. Problems such as uneven production, uneven layers, many defects, and unstable carrier mobility, so as to improve the smoothness and continuity of the graphene surface and reduce the porosity

Method used

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  • Preparation method of graphene on SiC substrate based on Cu film annealing and chlorine reaction
  • Preparation method of graphene on SiC substrate based on Cu film annealing and chlorine reaction

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Embodiment 1

[0026] Embodiment 1, making 6H-SiC and Cl 2 Reaction and Cu film annealing of graphene.

[0027] Step 1: Clean the 6H-SiC substrate to remove surface contamination.

[0028] (1.1) Using NH for 6H-SiC substrate 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;

[0029] (1.2) Use HCl+H on the 6H-SiC substrate after removing the surface organic residues 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0030] Step 2: Perform hydrogen etching on the 6H-SiC substrate.

[0031] Set the pressure in the reaction chamber to 13.3Pa, raise the temperature to 1500°C, and perform hydrogen etching treatment on 6H-SiC for 30 minutes. The hydrogen flow rate is 80L / min to remove scratches on the surface of the 6H-SiC substrate and generate nanometer-level high cycles. Sexually smooth step morphology.

[0032] Step 3: Removing hydrogen...

Embodiment 2

[0043] Embodiment 2, making 4H-SiC and Cl 2 Reaction and Cu film annealing of graphene.

[0044] Step 1: cleaning the 4H-SiC substrate to remove surface pollutants.

[0045] For 4H-SiC substrates, use NH first 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0046] Step 2: performing hydrogen etching on the 4H-SiC substrate.

[0047] Set the pressure in the reaction chamber to 13.3Pa, raise the temperature to 1550°C, and perform hydrogen etching on 4H-SiC for 20 minutes. The hydrogen flow rate is 80L / min to remove scratches on the surface of the 4H-SiC substrate and generate nanometer-level high cycles. Sexually smooth step morphology.

[0048] Step 3: Removing hydrogen etching residual compounds on the surface of 4H-SiC.

[0049] Lower the temperature ...

Embodiment 3

[0058] Embodiment 3, making 6H-SiC and Cl 2 Reaction and Cu film annealing of graphene.

[0059] Step A: Clean the surface of the 6H-SiC substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0060] Step B: Set the pressure in the reaction chamber to 13.3Pa, raise the temperature to 1600°C, and perform hydrogen etching treatment on 6H-SiC for 15 minutes, with a hydrogen flow rate of 80L / min, to remove scratches on the surface of the 6H-SiC substrate and produce nanoscale High periodic smooth step morphology.

[0061] Step C: Lower the temperature of the reaction chamber to 900°C, and feed SiH with a flow rate of 1ml / min 4 gas for 10 min to remove the compounds produced by hydrogen etching on the surface of 6H-SiC.

[0062] Step D: Ad...

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Abstract

The invention discloses a preparation method of graphene on an SiC substrate based on Cu film annealing and chlorine reaction and mainly solves the problem that graphene prepared in the prior art has small area, can not be used for large-scale production and has non-uniform layers, multiple defects and unstable carrier mobility. The preparation method comprises the following steps: cleaning an SiC sample sheet; (2) putting the cleaned SiC sample sheet into graphene growth equipment and carrying out hydrogen etching on the SiC sample sheet; (3) introducing mixed gas of Ar gas and Cl2 into a reaction chamber and reacting SiC with Cl2 for 4-10 minutes at the temperature of 700-1,100 DEG C to generate a carbon film; (4) plating a Cu film on the generated carbon film; (5) putting a carbon film sample sheet plated with the Cu film into Ar gas and annealing for 15-25 minutes at the temperature of 900-1,200 DEG C to generate the graphene; and (6) removing the Cu film from a graphene sample sheet. The graphene prepared by the method has the advantages of smooth surface, good continuity and low porosity and can be used in the fields of biology, micro-electronics, chemicals and the like.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor material and a preparation method thereof, in particular to a method for preparing graphene on a SiC substrate based on Cu film annealing and chlorine gas reaction. technical background [0002] With the announcement of the winner of the Nobel Prize in Physics in 2010, Graphene has also become the focus of discussion. In 2004, Andre Geim and Konstantin Novoselov of the University of Manchester successfully peeled off graphene from graphite using ordinary adhesive tape. This material is only one carbon atom thick and is currently known the thinnest material. Not only is it the thinnest known material, it's also very strong and flexible; as a single substance, it transports electrons faster than any known conductor at room temperature. Graphene can be applied to the fields of transistors, touch screens, and gene sequencing, and it is expected to help physic...

Claims

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Application Information

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IPC IPC(8): C04B41/50C04B41/85C01B31/04C01B32/188
Inventor 郭辉凌显宝张玉明张晨旭雷天民
Owner XIDIAN UNIV
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