Junction-to-case thermal resistance testing method

Abstract

The invention discloses a junction-to-case thermal resistance testing method, comprising the following steps of: (1) measuring a transient cooling curve of a to-be-tested device under a dry contact condition; (2) measuring a transient cooling curve of the to-be-tested device under a wet contact condition; (3) calculating difference Delta T between temperature variation amplitudes of the transient cooling curve under the dry contact condition and the transient cooling curve under the wet contact condition; (4) warming up a constant-temperature heat dissipation cold plate in the tested equipment by Delta T, and measuring the transient cooling curve under the wet contact condition again; (5) calculating the junction-to-case thermal resistance according to the dry-contact transient cooling curve measured in the step (1) and the wet-contact transient cooling curve measured in the step (4).

Description

technical field [0001] The invention relates to a method for testing junction-to-case thermal resistance, in particular to a method for testing semiconductor device junction-to-case thermal resistance. Background technique [0002] Junction-to-case thermal resistance is an important indicator of semiconductor device performance parameters, which characterizes the heat dissipation capability of the device. In the design and use of semiconductor devices, heat dissipation characteristics are an important factor that must be considered. Accurate measurement of junction-to-case thermal resistance has important reference significance for improving packaging and heat dissipation design, and evaluating the working limit of devices. [0003] The traditional junction-case thermal resistance test method uses a thermocouple to measure the shell temperature of the device. Because there is a certain temperature difference between the end of the thermocouple and the contact surface of the...

AI Technical Summary

Problems solved by technology

Especially for power semiconductor modules, such as insulated gate bipolar transistors (IGBT), these products use silicon, ceramics, copper and other packaging materials with obvious temperature nonlinearity, and have a large heat dissipation area and small junction-to-case thermal resistance, and the instantaneous The early separation of the state thermal impedance curve will cause the measured junction-to-case thermal resistance to be significantly smaller or even get wrong measured values.

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