Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Writing-in and reading method of solid-state memory system flash translation layer (FTL) with compression function

A solid-state storage and functional technology, applied in the field of writing and reading, can solve the problem of waste of storage space, achieve the effect of avoiding waste and improving storage rate

Active Publication Date: 2013-06-05
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
View PDF4 Cites 27 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the 2KB storage space of this internal fragment is wasted

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Writing-in and reading method of solid-state memory system flash translation layer (FTL) with compression function
  • Writing-in and reading method of solid-state memory system flash translation layer (FTL) with compression function
  • Writing-in and reading method of solid-state memory system flash translation layer (FTL) with compression function

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0023] The system applicable to the present invention is a solid-state storage system, especially a storage system that reads and writes data according to the storage unit such as the page size (the reading and writing unit is 512byte or 4KB or 8KB, etc.), such as the solid-state storage of the NAND FLASH form currently commonly used system or other forms of semiconductor storage systems, which are not specifically limited here.

[0024] In a solid-state storage system, a physical storage module generally includes a plurality of "blocks", and each "block" includes storage units in various partition...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a writing-in method of a solid-state memory system flash translation layer (FTL) with a compression function. A solid-state memory system comprises a pre-compression cache, a data compression unit, a post-compression cache, an address mapping table, a data compression FTL and a memory unit. The writing-in method comprises that the solid-state memory system receives and resolves a writing-in instruction; the solid-state memory system caches data to be written in the pre-compression cache; the data compression unit performs data compression of the data in the pre-compression cache and memorizes compressed data in the post-compression cache; the data compression FTL can perform address mapping management, garbage collection, loss balance and the like to compressed data blocks with variable length; and the solid-state memory system writes the compressed data in the post-compression cache in the memory unit. The writing-in method can enable the solid-state memory system to have the built-in compression capacity and the FTL with the compression function, and can improve memory space utilization rate of the solid-state memory system and avoid memory space waste.

Description

technical field [0001] The present invention mainly relates to the field of solid-state storage systems, in particular to a writing and reading method capable of improving the storage space utilization rate of the solid-state storage system. Background technique [0002] The solid-state storage system using NAND Flash has gradually become a new popular storage system (Solid State Disk, SSD). However, since the service life of Flash is limited (25nm MLC erasing times are about 3000 times), how to reduce the erasing times of Flash is an important research direction in SSD. The use of data compression technology can greatly reduce the amount of data actually written into the SSD, thereby reducing the number of erasing and writing to the Flash and prolonging its life. [0003] For example, general executable files, text files, and database files can generally be reduced in volume by 30% to 60% after lossless data compression, and the required storage space is greatly reduced. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02
CPCG06F12/0246G06F2212/401G06F2212/7201
Inventor 刘伟
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com