Circuit simulation method of single photon avalanche diode detector
A single-photon avalanche and circuit simulation technology, which is applied in the fields of instruments, electrical digital data processing, and special data processing applications, can solve the problems of complex model circuit structure, poor convergence, and low simulation accuracy
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[0030] 1. Model circuit structure
[0031] The invention proposes a circuit simulation method of a single photon avalanche diode (SPAD) detector. figure 1 It is a schematic diagram of the structure of a typical SPAD device, and an avalanche diode is formed between the P+ layer and the N well region. In order to prevent permanent breakdown at the edge of the PN junction under strong reverse bias, there is a lightly doped P-well and a shallow trench (STI) between the P+ layer and the N well for isolation to reduce the p + The fringing electric field of the n junction.
[0032] figure 2 is the current-voltage characteristic curve of SPAD. The working state of the SPAD can be divided into three stages: when the SPAD is forward-conducting, the SPAD can be regarded as an ordinary diode working in the conducting state, and its current value and the voltage drop at both ends of the diode increase exponentially; When the SPAD is reverse-biased and the reverse-bias voltage value at...
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