Electrostatic discharge protective element

Abstract

The invention relates to an electrostatic discharge protective element. The electrostatic discharge protective element comprises a P type basement, a plurality of second P type well areas, a plurality of first P + type doped areas and a plurality of N + type doped areas. The P type basement comprises a first P type well area, an N type well area and an N type deep well area. The plurality of second P type well areas are arranged in the N type deep well area. The plurality of N + type doped areas and the plurality of N + type doped areas are alternately arranged in the first P type well area, the N type area and the plurality of second P type well areas The first P + type doped area of the first P type well area is connected with a first connecting end of an electrical connecting element of the N type deep well area. The doped area of the first P type well area is connected with a second connecting end of an electrical connecting element of the P type basement. The plurality of second P type well areas and the plurality of first N + type doped areas inside the plurality of second P type well areas form a diode string. The diode string is connected between the first N + type doped area inside the N type well area and the second connecting end in series.

Description

technical field [0001] The invention relates to a protection element, in particular to an electrostatic discharge protection element. Background technique [0002] Electrostatic discharge (ESD) is often the main cause of electrostatic overstress (electrostatic overstress) or permanent damage to integrated circuits, so the common practice is between the core circuit (core circuit) and the pad (pad) Add electrostatic discharge protection components to prevent damage from electrostatic discharge. Among many electrostatic discharge protection components, diode-triggered silicon controlled rectifiers (diode-triggered silicon controlled rectifiers, DTSCRs) are widely used in various types of integrated circuits due to their low trigger voltage and fast turn-on characteristics. [0003] figure 1 is a cross-sectional view of a known diode-triggered silicon-controlled rectifier. see figure 1 As shown, the diode triggered silicon controlled rectifier 100 includes a P-type substrat...

AI Technical Summary

Problems solved by technology

At this time, the equivalent PNP transistors MP22-MP24 in the diode-triggered silicon controlled rectifier 100 will generate a vertical leakage path, which in turn will cause the diode-triggered silicon controlled rectifier 100 to generate a huge leakage current

[0006] In other words, the diode-triggered silicon-controlled rectifier 100 cannot meet the low leakage current requirement required by high-speed transmission devices, and thus cannot be applied to high-speed transmission devices.

In addition, the diode triggered silicon controlled rectifier 100 does not have the ESD protection function of the NS mode

[0007] It can be seen that the above-mentioned existing diode-triggered silicon-controlled rectifier obviously still has inconvenience and defects in structure and use, and needs to be further improved urgently.

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general products do not have a suitable structure to solve the above-mentioned problems. This is obviously related. The problem that the industry is eager to solve

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