Solar cell chip and manufacturing method thereof

Abstract

The invention discloses a high-power light-gathering solar cell chip, which comprises a solar cell epitaxial overlay, latticed metal nano-electrodes, grid electrodes and a transparent conducting layer, wherein the latticed metal nano-electrodes cover on the surface of the solar cell epitaxial overlay; the grid electrodes are formed on the latticed metal nano-electrodes; and the transparent conducting layer is formed on the latticed metal nano-electrodes, and is in ohmic contact with the solar cell epitaxial overlay. The transparent conducting layer is in ohmic contact with the surface of the solar cell epitaxial overlay on a large area, so that the contact resistance of the electrodes and a cell epitaxial sheet is reduced greatly; the latticed metal nano-electrodes are embedded into the transparent conducting layer, so that the conducting capability of the transparent conducting layer is increased greatly, and the problem of insufficient conducting capability of the transparent conducting layer under a high-power light-gathering condition is solved; and the electrical conductivity of the transparent conducting layer is increased, so that the grid electrodes can be designed with larger distances, and the utilization ratio of sunlight is increased.

Description

technical field [0001] The invention relates to a high-power concentrating solar cell chip and a manufacturing method thereof, belonging to the field of semiconductor optoelectronic devices and technologies. Background technique [0002] Solar cell power generation is an important part of the new energy field in the future. However, the cost of solar cell power generation is still relatively high at present. To reduce the cost, the most direct and effective way is to improve the photoelectric conversion efficiency of solar cells. There are many factors affecting the photoelectric conversion efficiency of solar cells, among which the power loss of the internal series resistance of the cell is one of the most important factors. [0003] Among the components of the internal series resistance of the solar cell, the contact resistance between the light-receiving surface electrode and the semiconductor layer of the cell is an important component. Traditional solar cells usually u...

AI Technical Summary

Problems solved by technology

Traditional solar cells usually use a grid electrode structure, and the electrode grid lines form ohmic contact with the semiconductor layer. In order to maximize the use of sunlight, the total area of ​​the grid electrode accounts for only a small part of the total area of ​​the battery chip (less than 10%) ), which greatly limits the contact area between the electrode and the semiconductor layer, thereby increasing the contact resistance between the electrode and the semiconductor layer

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