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Thin film solar cell back counter electrode and preparation method thereof

A technology of solar cells and counter electrodes, which is applied in the manufacture of circuits, electrical components, and final products. It can solve the problems of poor conductivity of the back and counter electrodes, contradictions between electrical and optical properties, etc., to improve efficiency, improve lateral conductivity, Reduce the effect of spreading

Inactive Publication Date: 2013-04-24
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are defects in this way of optimizing the back electrode, because as the substrate temperature increases during sputtering, the conductivity of the back electrode gradually deteriorates, and there is a contradiction between electrical and optical properties.

Method used

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  • Thin film solar cell back counter electrode and preparation method thereof
  • Thin film solar cell back counter electrode and preparation method thereof
  • Thin film solar cell back counter electrode and preparation method thereof

Examples

Experimental program
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Effect test

preparation example Construction

[0027] The preparation method of the back electrode of the thin film solar cell of the present invention comprises the following steps

[0028] (1) Clean the substrate 1 and dry it with high-purity nitrogen gas, then place it in a magnetron sputtering growth chamber, and deposit a continuous metal film 2 on the substrate 1 by magnetron sputtering technology, the metal film 2 The thickness is 60nm-400nm, the substrate 1 is polished glass, single crystal silicon wafer, ceramic sheet or metal resistant to 500°C high temperature, the metal film 2 is Ag film, Cu film or Al film, the background vacuum of the sputtering chamber The degree is 5.0×10 -4 Pa~8.0×10 -4 Pa, the substrate temperature is 25°C-500°C, the sputtering process is carried out in low-pressure high-purity argon, the pressure is kept at 1Pa-2Pa, the sputtering power is 30W-50W, and the deposition time is 1min-10min;

[0029] (2) Fix the metal mask with the grid pattern on the surface of the metal film 2, and place ...

Embodiment 1

[0033] Such asfigure 1 As shown, the back electrode of a thin-film solar cell includes polished glass resistant to a high temperature of 500°C as a substrate 1, and a metal film 2 with a thickness of 60 nm is deposited on the surface of the substrate 1. The metal film 2 is an Ag metal film, and the surface of the Ag metal film is deposited with The first transparent conductive film 3 of the 20nm thick grid pattern, the first transparent conductive film 3 is an ATO grid pattern transparent conductive film, and the grid spacing is 10 μ m, and the second transparent conductive film with a thickness of 1 nm is also deposited on the ATO mesh pattern transparent conductive film. The film 4, the second transparent conductive film 4 is an ATO transparent conductive film. After testing, the average haze value of the back-to-back electrode described in Example 1 in the visible light and infrared bands is above 95%, and the value of the lateral transmission resistivity is 1.248×10 -6 Ω·c...

Embodiment 2

[0040] The back electrode of the thin-film solar cell includes a polished single-crystal silicon wafer resistant to 500°C high temperature as the substrate 1, a metal film 2 with a thickness of 250nm is deposited on the surface of the substrate 1, the metal film 2 is a Cu metal film, and the surface of the Cu metal film is deposited with The first transparent conductive film 3 of 100nm thick grid form, the first transparent conductive film 3 is AZO grid form transparent conduction film, grid spacing is 500 μ m, the second transparent conduction film of 5nm thickness is also deposited on the AZO grid form transparent conduction film The film 4, the second transparent conductive film 4 is an AZO transparent conductive film. After testing, the average haze value of the back-to-back electrode described in Example 1 in the visible light and infrared bands is above 95%, and the value of the lateral transmission resistivity is 1.521×10 -6 Ω·cm , the vertical transmission resistivity ...

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Abstract

The invention discloses a thin film solar cell back counter electrode which comprises a substrate, wherein a metal thin film is deposited on the surface of the substrate, a net-type first transparent conductive thin film is deposited on the surface of the metal thin film, and a second transparent conductive thin film is deposited on the surface of the first transparent conductive thin film. According to the thin film solar cell back counter electrode and a preparation method of the thin film solar cell back counter electrode, the net-type first transparent conductive thin film and the second transparent conductive thin film are sequentially deposited on the metal thin film, and therefore an even pyramid-like structure is formed, the transmission of photon-generated carriers inside a thin film solar cell to a back electrode and the transverse conduction of the back electrode are improved, the situation that metal layers inside grooves of the net-type first transparent conductive thin film contact a main body of the thin film solar cell directly is prevented, diffusion is reduced, the defect that when an existing back counter electrode is in a high haze value, the electrical resistivity is over high is effectively overcome, the thin film solar cell back counter electrode is enabled to have good optical performance and good electrical performance at the same time, and the efficiency of the thin film solar cell is improved.

Description

technical field [0001] The invention relates to a back-counter electrode of a thin-film solar cell and a preparation method thereof. Background technique [0002] With the development of society and the improvement of living standards, human beings' demand for energy has increased significantly, and they are more dependent on it. As traditional energy sources, coal, oil, and natural gas can no longer meet the needs of human long-term development. As a new energy source, solar energy is inexhaustible and has the advantages of safety, cleanliness and low cost. Therefore, solar cells are widely used in various technical fields such as life, industry, military, and space, and become the focus of research and development in the energy field. Solar cells include silicon solar cells, dye-sensitized solar cells, organic solar cells, and compound solar cells. Among them, the research and development of silicon solar cells is the earliest, and the technology is the most mature. Sil...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/18C23C14/35
CPCY02P70/521Y02P70/50
Inventor 王春雷毛艳丽张振龙王超张伟风
Owner HENAN UNIVERSITY
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