A kind of thin-film solar cell back-counter electrode and preparation method thereof
A technology of solar cells and counter electrodes, which is applied in the manufacture of circuits, electrical components, and final products. The effect of direct contact
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[0027] The preparation method of the back electrode of the thin film solar cell of the present invention comprises the following steps
[0028] (1) Clean the substrate 1 and dry it with high-purity nitrogen gas, then place it in a magnetron sputtering growth chamber, and deposit a continuous metal film 2 on the substrate 1 by magnetron sputtering technology, the metal film 2 The thickness is 60nm-400nm, the substrate 1 is polished glass, single crystal silicon wafer, ceramic sheet or metal resistant to 500°C high temperature, the metal film 2 is Ag film, Cu film or Al film, the background vacuum of the sputtering chamber The degree is 5.0×10 -4 Pa~8.0×10 -4 Pa, the substrate temperature is 25°C-500°C, the sputtering process is carried out in low-pressure high-purity argon, the pressure is kept at 1Pa-2Pa, the sputtering power is 30W-50W, and the deposition time is 1min-10min;
[0029] (2) Fix a metal mask with a grid pattern on the surface of the metal film 2, and place it i...
Embodiment 1
[0033] Such as figure 1 As shown, the back electrode of a thin-film solar cell includes polished glass resistant to a high temperature of 500°C as a substrate 1, and a metal film 2 with a thickness of 60 nm is deposited on the surface of the substrate 1. The metal film 2 is an Ag metal film, and the surface of the Ag metal film is deposited with The first transparent conductive film 3 of the array type with a thickness of 20nm, the first transparent conductive film 3 is an ATO array type transparent conductive film, the first transparent conductive film of the array type is composed of several first transparent conductive film units, any adjacent The unit spacing between the two first transparent conductive films is 10 μm, and a second transparent conductive film 4 with a thickness of 1 nm is deposited on the ATO array transparent conductive film. The second transparent conductive film 4 is an ATO transparent conductive film. After testing, the average haze value of the back-t...
Embodiment 2
[0040] The back electrode of the thin-film solar cell includes a polished single-crystal silicon wafer resistant to 500°C high temperature as the substrate 1, a metal film 2 with a thickness of 250nm is deposited on the surface of the substrate 1, the metal film 2 is a Cu metal film, and the surface of the Cu metal film is deposited with 100nm thick array type first transparent conductive film 3, the first transparent conductive film 3 is an AZO array type transparent conductive film, the array type first transparent conductive film is composed of several first transparent conductive film units, any adjacent The distance between the two first transparent conductive films is 500 μm, and a 5nm-thick second transparent conductive film 4 is deposited on the AZO array transparent conductive film. The second transparent conductive film 4 is an AZO transparent conductive film. After testing, the average haze value of the back-to-back electrode described in Example 1 in the visible lig...
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