Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Halftone mask plate and manufacturing method for same

A half-tone mask and semi-transparent technology, which is applied in the photoplate making process, optics, instruments and other directions of the pattern surface, can solve the problems of poor lighting, thin channel photoresist, and defects, etc., and achieve improved pixel lighting Defective phenomenon, the effect of avoiding overdevelopment

Active Publication Date: 2015-06-03
BOE TECH GRP CO LTD +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Due to the highly dense fan-shaped wiring area (Fanout Line) in the peripheral wiring area of ​​the TFT-LCD array substrate, the consumption of developer in the development process after exposure is relatively small, so that the developer concentration in the local area near this area is higher than that of the pixel area. , so that it is easy to cause the channel photoresist in the pixel area near the peripheral wiring area to be thinner, and the source and drain channel semiconductors are easily missing after the etching process, so that the pixel area near the peripheral wiring area of ​​​​TFT-LCD appears Poor lighting (poor pixel lighting) phenomenon

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Halftone mask plate and manufacturing method for same
  • Halftone mask plate and manufacturing method for same
  • Halftone mask plate and manufacturing method for same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.

[0036] Embodiments of the present invention provide a half-tone mask and its manufacturing method, which can effectively prevent the photoresist in the channel of the pixel area near the peripheral wiring area of ​​the TFT-LCD array substrate from being too thin, and the source and drain are prone to occur after the etching process. The channel semiconductor is missing, so as to improve the poor lighting of pixels in TFT-LCD.

[0037] An embodiment of the present invention provides a half-tone mask, including a pixel area and a peripheral wiring area, the pixel area includes a semi-transparent area, and the peripheral wiring area includes at least one fan-shaped wiring area, wherein, from the In the direction away from the edge of the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a halftone mask plate and a manufacturing method for the same, belongs to the field of display. The halftone mask plate comprises a pixel area and a peripheral routing area, wherein the pixel area comprises a semi-transparent area, and the light transmittance of the semi-transparent area of the mask plate is gradually reduced in the direction form a place away from the edge of the pixel area to the edge of the pixel area. According to the halftone mask plate adopting the technical scheme provided by the invention, the easily-caused semiconductor lack of a source channel and a drain channel due to the thinness of a photoresist in the channel of a pixel area in the vicinity of the peripheral routing area of a TFT-LCD (thin film transistor-liquid crystal display) array substrate after an etching technique can be effectively avoided, and thus the phenomenon of bad pixel lighting-on of the TFT-LCD is improved.

Description

technical field [0001] The invention relates to the display field, in particular to a halftone mask and a manufacturing method thereof. Background technique [0002] In thin film transistor-liquid crystal displays (TFT-LCD), TFT plays a very important role as a switching device of digital circuits. At present, in the production of TFT-LCD array substrates, single slit diffraction masks (Single Slit Mask), gray tone masks (Gray Tone Mask) or half tone masks (Half Tone Mask) are generally used for source and drain metal layer masking. Die (SD Mask) process. When a half-tone mask is used for the source-drain metal layer masking process, the source-drain channel region is exposed through the semi-transparent film. Since the source-drain channel itself is relatively narrow, if the light transmittance of the semi-transparent film is too low and the exposure is insufficient, it is easy to cause the source-drain channel metal bridge of the TFT-LCD array substrate after development...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/32G03F1/54G03F1/62
Inventor 罗丽平贠向南许朝钦金基用周子卿
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com