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Method for producing quantized abnormal Hall effect

An anomalous Hall effect and quantization technology, which is applied to the application of electro-magnetic effect devices, material selection, and magnetic field controlled resistors, etc., can solve problems such as unmanufactured and quantized anomalous Hall effects. , to achieve large anomalous Hall resistance, realize quantized anomalous Hall effect, and reduce carrier concentration

Active Publication Date: 2013-03-27
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this theoretical quantized anomalous Hall effect has not been realized in practice
Even a ferromagnetic material (including magnetically doped topological insulator )

Method used

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  • Method for producing quantized abnormal Hall effect
  • Method for producing quantized abnormal Hall effect
  • Method for producing quantized abnormal Hall effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] Example 1 (T=30mK, 5QL sample, back gate control)

[0071] The magnetic doped topological insulator quantum well film is Cr 0.15 (Bi 0.10 Sb 0.9 ) 1.85 Te 3 , the thickness is 5QL, and the insulating substrate 30 is an STO substrate.

[0072] The Hall curves of the magnetic-doped topological insulator quantum well film under different back gate voltages were measured. see Figure 6-9 , at a temperature of 30 milliKelvin (mK), the R of the sample AH With the back gate voltage (V b ) changes with changes. Figure 6-9 Hysteresis also appears in the middle Hall curve, and the sample has very good ferromagnetism. When 0V≤V b ≤10V, the R of the sample AH With V b The change is small when V b at -4.5V, R AH is 25.8 kΩ. where μ 0 H in H is the magnetization, and μ 0 is the vacuum magnetic permeability, and the unit T is Tesla.

Embodiment 2

[0073] Example 2 (T=K, 4QL sample, back gate control)

[0074] The magnetic doped topological insulator quantum well film is Cr 0.22 (Bi 0.22 Sb 0.78 ) 1.78 Te 3 , the thickness is 4QL, and the insulating substrate 30 is an STO substrate.

[0075] see Figure 10 , at T=1.5K, 4QL Cr on STO(111) substrate 0.22 (Bi 0.22 Sb 0.78 ) 1.78 Te 3 different V b The Hall curve under Figure 10 shown. From Figure 10 It can be seen that the Hall curve has hysteresis, and the shape of the hysteresis loop is very "square", indicating that the sample has very good ferromagnetism. by V b regulation, can obtain higher R AH . R AH With V b The increase first increases and then decreases, when V b =45V, R AH It reaches the maximum, about 10 kΩ, which is close to 0.4 quantum resistance (25.8kΩ). Figure 11 is the sample at different V b under the reluctance curve for different V b Below, the magnetoresistance curves are all "butterfly-shaped", which also shows that the sam...

Embodiment 3

[0076] Example 3 (T=100mK, 4QL sample, back gate control)

[0077] The magnetic doped topological insulator quantum well film is Cr 0.22(Bi 0.22 Sb 0.78 ) 1.78 Te 3 , the thickness is 4QL, and the insulating substrate 30 is an STO substrate.

[0078] The Hall curves of the magnetic-doped topological insulator quantum well film under different back gate voltages were measured. see Figure 13 , at a temperature of 100 milliKelvin (mK), the R of the sample AH With the back gate voltage (V b ) changes with changes. Figure 13 Hysteresis also appears in the middle Hall curve, and the sample has very good ferromagnetism. When 0V≤V b ≤20V, the R of the sample AH With V b little change in R AH Close to 0.6 quantum resistance (25.8kΩ). Specifically, when V b =10 V, R AH max, (R AH ) max =0.59h?e -2 , that is about 15.3kΩ. This value has far exceeded half of the quantum Hall resistance value, and is the largest abnormal Hall resistance that can be obtained in the...

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Abstract

The invention relates to a method for producing the quantized abnormal Hall effect. The method comprises the steps of manufacturing a topological insulator quantum well film with the thickness of 3-5QL on an insulating substrate; doping a first element and a second element in the topological insulator quantum well film to form a magnetic doped topological insulator quantum well film while manufacturing the topological insulator quantum well film, wherein the first element and the second element respectively introduce a hole current carrier and an electronic current carrier in the magnetic doped topological insulator quantum well film to enable current carrier concentration in the magnetic doped topological insulator quantum well film to be reduced to below 1*1013cm-2, and one of the first element and the second element performs magnetic doping to the topological insulator quantum well film; and exerting voltage to the magnetic doped topological insulator quantum well film to enable the current carrier concentration to be further reduced till the quantized abnormal Hall effect is achieved.

Description

technical field [0001] The invention belongs to the field of condensed matter physics and relates to a method for generating quantized abnormal Hall effect. Background technique [0002] The Hall effect (HE) was discovered by American physicist E. H. Hall in 1879 while studying the conductive structure of metals. When the current passes through the conductor perpendicular to the external magnetic field, a potential difference will appear between the two end faces of the conductor perpendicular to the direction of the magnetic field and current. This phenomenon is the Hall effect. Scientists subsequently discovered the anomalous Hall effect (AHE) in magnetic materials and the spin Hall effect (SHE) in semiconductors. Theoretically, the three Hall effects should exist in their corresponding quantized forms under certain conditions. In 1980, German physicist K. V. Klitzing discovered the quantum Hall effect (quantum Hall effect, QHE) (Klitzing K. V. et al., New Method for Hi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H10N50/10H10N52/01H10N52/00
CPCH01L43/065H01L43/14H10N52/01H10N52/101
Inventor 薛其坤何珂马旭村陈曦王立莉王亚愚吕力常翠祖冯硝
Owner TSINGHUA UNIV
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