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A Chalcogenide Thin Film Material Suitable for Surge Protection Devices

A surge protection device, chalcogenide technology, applied in antimony compounds, selenium/tellurium compounds, binary selenium/tellurium compounds, etc., can solve the problems of increasing chip area, increasing product size, and expensive products.

Active Publication Date: 2014-10-15
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

General semiconductor surge protection devices such as pnpn surge protection components or pn diode components are installed on the substrate, which greatly increases the size of the product, increases the area of ​​the chip, and makes the product expensive

Method used

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  • A Chalcogenide Thin Film Material Suitable for Surge Protection Devices
  • A Chalcogenide Thin Film Material Suitable for Surge Protection Devices
  • A Chalcogenide Thin Film Material Suitable for Surge Protection Devices

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Embodiment 1-9

[0028] see figure 1 , is a schematic diagram of the cross-sectional structure of an embodiment of the present invention, in which only the core structure of the present invention is shown, including the lower electrode (2), the lower heating electrode (3), the chalcogenide film (5) and the upper electrode (6) . Such as figure 1 As shown, the lower heating electrode (3), the chalcogenide film (5) and the upper electrode (6) are arranged on the lower electrode (2) from top to bottom. The chalcogenide compound film (5) (that is, the phase change material layer) is electrically connected to the lower electrode (2) through the lower heating electrode (4), and the upper part of the chalcogenide compound film (5) is electrically connected to the upper electrode (6) .

[0029] The material that each part of the present invention adopts is as shown in table 1:

[0030]

Bottom electrode(2)

Bottom heating electrode(3)

Layers of insulating material (4)

Chalcog...

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Abstract

The invention relates to the field of surge protection devices, and in particular relates to a chalcogenide thin-film material suitable for a surge protection device. The chalcogenide thin-film material is a compound consisting of more than two elements of Ge, Al, As, Sb, Te, S or Se according to any proportion. According to the chalcogenide thin-film material suitable for the surge protection device, the overvoltage protection of a circuit is realized by aiming at the unique threshold conductivity character of chalcogenide, and the work principle of a novel surge protection device with the chalcogenide thin-film material disclosed by the invention is totally different from that of a semiconductor surge protection device.

Description

technical field [0001] The invention relates to the field of surge protection devices in circuits, in particular to a chalcogenide compound film material suitable for surge protection devices. Background technique [0002] Surge is also called surge, as the name implies, it is an instantaneous overvoltage exceeding the normal working voltage. Essentially, a surge is a violent pulse that occurs in mere millionths of a second. [0003] In today's SPD information age, computer networks and communication equipment are becoming more and more sophisticated, and the requirements for their working environment are getting higher and higher, while lightning and instantaneous overvoltages of large electrical equipment will pass through power supplies, antennas, and radio signals more and more frequently. Lines such as transceiver equipment intrude into indoor electrical equipment and network equipment, causing damage to equipment or components, casualties, interference or loss of tran...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/00C01B19/04C01G30/00H01C7/12
Inventor 任堃饶峰宋志棠陈小刚王玉婵
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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