High-power semiconductor laser with non-absorbing windows

Abstract

The invention discloses a high-power semiconductor laser with non-absorbing windows, wherein the non-absorbing windows are positioned above a ridge-shaped or bar-shaped part of the laser and distributed at two ends of a laser cavity surface and distributed in a semicolumnar shape, the planar part of each non-absorbing window is a light emergent cavity surface of the laser, and the arc-surface part of each non-absorbing window is positioned inside the cavity length of the laser; the depth of each non-absorbing window should exceed that of an upper waveguide layer of an active area of the laser; in the ridge-shaped waveguide structure, the diameter of the non-absorbing window is larger than or equal to 1 micrometer and smaller than 20 micrometers; or in the bar-shaped laser structure, the diameter of each non-absorbing window is larger than 3 micrometers and smaller than 900 micrometers. According to the high-power semiconductor laser, the optical catastrophe damage threshold is greatly increased, the light absorption caused by impurity level is effectively reduced, and the maximum output power of the laser is promoted; and the high-power semiconductor laser is simple in process and feasible and has a large-scale production feature.

Description

technical field [0001] The invention belongs to the technical field of semiconductor laser equipment and relates to a high-power semiconductor laser with a non-absorption window. Background technique [0002] Semiconductor lasers have become one of the most important semiconductor optoelectronic devices due to their wide range of wavelength selection, small size, low power consumption, high efficiency, good inheritance, and low cost. Among them, high-power semiconductor lasers are widely used in laser storage, laser display, laser printing, material processing, laser marking, biomedicine, medical equipment, space optical communication and other fields. Guidance, laser night vision, laser radar, laser fuze, laser weapons, war simulation, etc. High-power semiconductor laser technology covers almost all fields of optoelectronics. The development of high-performance high-power lasers requires coordination and cooperation in many aspects such as laser epitaxial wafer structure d...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a high-power semiconductor laser with a non-absorbing window, which solves the problem that in the prior art, due to the relatively uniform distribution of the absorption energy levels of the impurities introduced when the quantum wells are mixed, it will cause extra light outside the central area of ​​the spot. absorption, thereby reducing the output power of the laser

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