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Band-gap reference voltage source circuit

A reference voltage source and circuit technology, which is applied in the direction of adjusting electrical variables, instruments, control/regulation systems, etc., can solve the problems of excessive area of ​​the bandgap reference voltage source circuit, etc., to reduce the area, reduce the size of the current and, Effect of reducing circuit cost and usage cost

Active Publication Date: 2013-01-02
BYD SEMICON CO LTD
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In order to solve the technical problem that the area of ​​the existing bandgap reference voltage source circuit is too large, the present invention provides a bandgap reference voltage source circuit with a smaller area

Method used

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Embodiment Construction

[0016] In order to make the technical problems, technical solutions and beneficial effects solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0017] Such as figure 2 As shown, the bandgap reference voltage source circuit provided by the present invention includes: a first mos transistor M1, a second mos transistor M2, a third mos transistor M3, a fourth mos transistor M4, a first resistor R1, and a second resistor R2 , the third resistor R3, the first triode Q1, and the second triode Q2.

[0018] The first mos tube M1, the second mos tube M2, the first resistor R1, and the first triode Q1 connected in series in sequence form the first current path; the third mos tube M3, the fourth mos tube M4, and the secon...

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Abstract

The invention provides a band-gap reference voltage source circuit, belonging to the field of integrated circuits. The band-gap reference voltage source circuit comprises a current mirror path consisting of two current paths, wherein the first current path comprises a first mos (metal oxide semiconductor) tube, a second mos tube, a first resistor and a first triode which are sequentially connected in series; and the second current path comprises a third mos tube, a fourth mos tube, a second resistor, a third resistor and a second triode which are sequentially connected in series, and the source electrode of the fourth mos tube is used as a reference voltage output end. The band-gap reference voltage source circuit only has two current branches, compared with the prior art, the application of the mos tubes and the triodes is reduced, the area of the band-gap reference voltage source circuit is effective reduced, and the current size and the power consumption of the voltage source circuit are also reduced, thereby achieving an effect of lowering the circuit cost and the application cost.

Description

technical field [0001] The invention belongs to the field of integrated circuits, in particular to a bandgap reference voltage source circuit. Background technique [0002] The prior art provides a bandgap reference voltage source circuit such as figure 1 As shown, the main part of the traditional bandgap reference voltage source circuit includes: the first mos transistor M1, the second mos transistor M2, the third mos transistor M3, the fourth mos transistor M4, the fifth mos transistor M5, the first resistor R1 , the second resistor R2, the first transistor Q1, the second transistor Q2, and the third transistor Q3. Wherein, the first mos tube M1 and the second mos tube M2 are enhanced nmos tubes, the third mos tube M3, the fourth mos tube M4, and the fifth mos tube M5 are enhanced pmos tubes. [0003] Wherein, the source of the third mos transistor M3 is connected to the power supply VDD, the gate is connected to the gate of the fourth mos transistor M4, and the drain i...

Claims

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Application Information

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IPC IPC(8): G05F3/30
Inventor 李佳栩刘辉傅璟军胡文阁
Owner BYD SEMICON CO LTD
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