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Method for preparing magnetic sensitive microstructure unit by femtosecond laser non-mask method

A femtosecond laser and magnetically sensitive technology, which is applied in the manufacture of microstructure devices, microstructure technology, microstructure devices, etc., can solve the problem of long production cycle, difficult micro-nanoscale processing, unsuitable for single-piece, small-batch production and Problems such as the trial production of new products, to achieve the effect of short pulse duration

Active Publication Date: 2015-02-11
HUAWEI TEHCHNOLOGIES CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, photolithography combined with ion beam or chemical reaction etching is a low-cost and mass-producible process in microfabrication; however, it is difficult to prepare submicron devices by photolithography, especially for nanometer devices. Powerless; electron beam lithography requires high equipment, and both require prefabricated masks, the process is complicated, the production cycle is long, and it is not suitable for single-piece, small-batch production and trial production of new products
[0003] When using conventional lasers for material processing, the processing resolution that can be achieved is limited by the diffraction limit of classical optical theory, making it difficult to process at the micro-nano scale

Method used

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  • Method for preparing magnetic sensitive microstructure unit by femtosecond laser non-mask method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Embodiment 1: Prepare the magnetically sensitive microstructure unit according to the following steps

[0015] Step 1: Deposit a buffer layer Cr with a thickness of 5nm and a ferromagnetic layer CoPt with a thickness of 40nm on the cleaned single crystal silicon substrate by using high-vacuum magnetron sputtering equipment to obtain a magnetic recording film; wherein, the growth conditions of the magnetic layer For: back vacuum 5×10 -6 Pa; sputtering pressure 0.3Pa; sputtering power 10W; argon flow rate 20sccm; substrate temperature 100°C;

[0016] Step 2. Use femtosecond laser as light source to irradiate the magnetic thin film. After the irradiation is completed, a triangular magnetically sensitive microstructure unit is obtained; wherein, the parameters of the femtosecond laser are: single pulse energy 5 μJ; pulse width 90fs ; Wavelength 800nm; Pulse frequency 50Hz; Among them, an induced magnetic field of 500Oe is applied along the direction perpendicular to the su...

Embodiment 2

[0017] Example 2: Prepare the magnetically sensitive microstructure unit according to the following steps

[0018] Step 1, using high vacuum magnetron sputtering equipment to deposit a magnetic layer Tb-Dy-Fe with a thickness of 500nm and a protective layer Ta with a thickness of 5nm on the cleaned glass substrate to obtain a giant magnetostrictive film; The growth condition of the layer is: background vacuum 5×10 -6 Pa; sputtering pressure 0.5Pa; sputtering power 120W; argon flow 20sccm; substrate temperature 300°C;

[0019] Step 2. Use femtosecond laser as light source without applying an induced magnetic field to irradiate the magnetic thin film. After the irradiation is completed, a magnetically sensitive microstructure unit with a unit shape of a rectangle is obtained; wherein, the parameters of the femtosecond laser are: single pulse energy 50 μJ The pulse width is 100fs; the wavelength is 800nm; the pulse frequency is 100Hz; the moving track of the sample stage is pr...

Embodiment 3

[0020] Example 3: Prepare the magnetically sensitive microstructure unit according to the following steps

[0021] Step 1, utilize high-vacuum magnetron sputtering equipment to deposit a buffer layer Ta with a thickness of 5nm, a CoFe ferromagnetic layer with a thickness of 5nm, an IrMn antiferromagnetic layer with a thickness of 12nm, and a thickness of 12nm on the cleaned single crystal silicon substrate. A protective layer Ta of 8nm was obtained to obtain a ferromagnetic / antiferromagnetic double-layer film; wherein, the growth condition of the magnetic layer was: background vacuum 5×10 -6 Pa; sputtering pressure 0.3Pa; sputtering power 30W; argon flow 20sccm; substrate temperature at room temperature;

[0022] Step 2. Use femtosecond laser as light source to irradiate the magnetic thin film. After the irradiation is completed, a magnetically sensitive microstructure unit whose unit shape is a regular hexagon is obtained; wherein, the parameters of the femtosecond laser ar...

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Abstract

The present invention discloses a method utilizing a femtosecond laser non-mask method to prepare a magnetic sensitive microstructure unit. The method comprises the following steps: (1) manufacturing a magnetic membrane in precipitation mode according to the sequence of a substrate, a buffer layer, a magnetic layer and a protective layer; and (2) using femtosecond laser as a light source, accurately controlling the position of a sample platform through a computer, conducting non-mask irradiation of the magnetic membrane to obtain the magnetic sensitive microstructure unit. Parameters of the femtosecond laser includes that single pulse energy is 5-50 mu joules, the pulse width is 90-150 femtoseconds, the wavelength is 800 nanometers, the pulse frequency is 10-100 hertzes, the movement speed of the sample table is 60-500 micrometers per minute, and an induced magnetic field of 0-500 oersteds is applied along the direction which is paralleled to or perpendicular to the membrane surface of the magnetic membrane during irradiation according to requirements. The method is simple, efficient and controllable, and is without prefabrication of masks.

Description

technical field [0001] The invention relates to a method for preparing a magnetically sensitive microstructure unit by using a femtosecond laser maskless method, and belongs to the technical field of magnetic and electronic device manufacturing. Background technique [0002] At present, the methods used to prepare micron, submicron and nanometer magnetically sensitive microstructure units based on magnetic single-layer films or multi-layer films mainly use photolithography, electron beam lithography, ion beam etching and chemical reaction etching. Among them, photolithography combined with ion beam or chemical reaction etching is a low-cost and mass-producible process in microfabrication; however, it is difficult to prepare submicron devices by photolithography, especially for nanometer devices. Powerless; electron beam lithography requires high equipment, and both require prefabricated masks, the process is complicated, the production cycle is long, and it is not suitable f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
Inventor 周广宏朱雨富潘旋章跃丁红燕郑晓虎夏木建
Owner HUAWEI TEHCHNOLOGIES CO LTD
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