Detection device and method for chemical-mechanical polishing end point of copper

Abstract

A detection method for a chemical-mechanical polishing end point of copper comprises the steps that a semiconductor substrate is provided, a to-be-polished structure is formed on the surface of the semiconductor substrate, and a material of the structure comprises the copper; the to-be-polished structure is subjected to chemical-mechanical polishing, and a polishing by-product is generated; the polishing by-product and a color developing agent are mixed; the absorbance of a mixture of the polishing by-product, polishing slurry and the color-developing agent is measured; the content of the copper in the mixture of the polishing by-product, the polishing slurry and the color-developing agent is calculated according to the absorbance of the mixture of the polishing by-product, the polishing slurry and the color-developing agent; and whether the polishing end point of the copper is reached is detected according to the content of the copper in the mixture of the polishing by-product, the polishing slurry and the color-developing agent. Accordingly, the invention further provides a detection device for the chemical-mechanical polishing end point of the copper and a chemical-mechanical polishing method of the copper. With the adoption of the detection device and detection method, the chemical-mechanical polishing end point of the copper can be detected precisely.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a copper chemical mechanical polishing endpoint detection device and method, and a copper chemical mechanical polishing method. Background technique [0002] The mechanism of chemical mechanical polishing (CMP) is that the surface material of the polished wafer chemically reacts with the slurry to form a relatively easy-to-remove surface layer. The grinding pressure is mechanically removed during the relative movement with the grinding pad. In particular, when CMP is performed on a metal material, the slurry contacts the metal surface to generate metal oxides, and the metal oxides are removed by grinding to achieve the effect of grinding. [0003] A chemical mechanical grinding device is disclosed in Chinese patent application publication number CN1471141A. Such as figure 2 As shown, the existing chemical mechanical polishing equipment includes an automatic rotating grinding disc...

AI Technical Summary

Problems solved by technology

Overpolishing conductor layers or films can increase circuit impedance

On the other hand, underpolish can cause short circuits

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