Chemical mechanical polishing method

Abstract

Provided is a chemical mechanical polishing method, comprising: providing a polishing layer; adopting alkaline polishing slurry to polish the polishing layer; adopting an acidic buffering agent to remove a residual layer formed on a surface of the polishing layer after the polishing; and after the removal of the residual layer, forming a passivation layer that covers the polishing layer. With the chemical mechanical polishing method in an embodiment of the invention, flatness degree of the surface of the polishing layer is high, yield of semiconductor devices is high, and long-term stability of semiconductor devices is good.

Description

technical field [0001] The invention relates to a chemical mechanical polishing process in a semiconductor process, in particular to a chemical mechanical polishing method. Background technique [0002] In the semiconductor industry, the fabrication of semiconductor devices involves multilayer thin film deposition processes. When depositing multi-layer thin films, with the increase of the number of layers, the undulation of the surface of the semiconductor device will gradually increase, and the undulation will greatly affect the yield and long-term reliability of the semiconductor device, so it is necessary to Each thin film layer of the semiconductor device is planarized so that each thin film layer of the semiconductor device has a smooth surface. [0003] In the 1980s, a chemical mechanical polishing (CMP) process was used in the semiconductor industry. Chemical mechanical polishing can effectively solve the problem of surface fluctuations of various thin film layers o...

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Problems solved by technology

[0007] Yet when removing described residue layer 111 with deionized water, residues such as part metal oxide and / or metal hydroxide 107, BTA109 attached to the surface of described metal oxide and / or metal hydroxide 107 are difficult to removed

The unremoved residues greatly affect the yield and long-term stability of semiconductor devices

[0008] In the patent application document with the publication number "CN101376232A", "a chemical mechanical polishing method capable of improving polishing performance" is disclosed. In this patent application document, the chemical mechanical polishing is divided into the first stage polishing and the second stage polishing. The first-stage method, the patent believes that reducing the pressure of the first-stage polishing can improve the polishing performance, but this method still cannot effectively solve the problems of yield and long-term stability of semiconductor devices

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