Graphene preparation method without substrate transferring

Abstract

The invention provides a graphene preparation method without substrate transferring. According to the graphene preparation method, a catalytic metal layer is deposited on a substrate; then, carbon ions are injected into the catalytic metal layer to form a carbon-atom-saturated face by using an ion implantation technology, and the carbon-atom-saturated face can be located at a position close to the substrate and a catalytic metal layer interface through controlling injected energy; then, the substrate is subjected to high-temperature annealing, carbon-atom layers, i.e. graphene films, are precipitated on the catalytic metal layer and a substrate interface; and finally, the catalytic metal layer is removed, and thus the graphene films are prepared on the substrate. The graphene preparation method without the substrate transferring has the advantages that the processing steps for preparing graphene are simplified, the graphene can be directly prepared on any substrate without transferring, the damage and the pollution to the structure of the graphene cannot be accordingly caused, and the graphene with high quality can be directly applied to a desired substrate, so that the preparation method can faster promote the wide application of the graphene in different fields.

Description

technical field [0001] The invention relates to a method for preparing graphene, in particular to a method for preparing graphene without substrate transfer, and belongs to the technical field of graphene synthesis and nanomaterials. Background technique [0002] In 2004, Andre Geim and Kostya Novoselov, professors of physics at the University of Manchester in the United Kingdom, successfully used a very simple method of micromechanical peeling (Micromechanical Cleavage). The graphite layer was exfoliated, and a free and stable single-crystal layer of graphite sheets was observed. This two-dimensional ordered carbon material that can exist alone is called graphene by scientists. The pair were also awarded the 2010 Nobel Prize in Physics for their pioneering research in the field of graphene. Carrier mobility in graphene is as high as 2 × 105 cm 2 ·V -1 , whose mobility is much higher than that of silicon materials used on a large scale in the semiconductor industry, and i...

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Problems solved by technology

[0007] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of method for preparing graphene without substrate transfer, for solving complex preparation process in the prior art, need substrate transfer and in substrate transfer Problems causing damage and contamination of the graphene structure

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