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Preparation method of zinc oxide/cuprous oxide heterojunction

A cuprous oxide and zinc oxide technology, applied in the field of chemistry, can solve the problems of high manufacturing cost, poor repeatability, n-type zinc oxide firmly combined with p-type materials, etc., achieving low cost, short reaction period, suitable for large-scale production and applied effect

Active Publication Date: 2013-11-13
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The first technical problem to be solved by the present invention is that the heterojunction preparation method in the prior art generally has the problems of high manufacturing cost and poor repeatability, and it is impossible to firmly combine p-type materials on n-type zinc oxide, and then Provide a method for preparing a zinc oxide / cuprous oxide heterojunction with low manufacturing cost and strong heterojunction stability

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  • Preparation method of zinc oxide/cuprous oxide heterojunction
  • Preparation method of zinc oxide/cuprous oxide heterojunction
  • Preparation method of zinc oxide/cuprous oxide heterojunction

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Embodiment 1

[0043] The preparation method of the zinc oxide / cuprous oxide heterojunction of the present invention comprises the following steps:

[0044] (1) Wash the FTO glass substrate with acetone and ethanol, then ultrasonically clean it with deionized water for 30 minutes, and dry it with nitrogen gas for use;

[0045] (2) Prepare 100mL of zinc chloride solution with a concentration of 0.08mol / L, then add 8mL of ammonia water dropwise to this solution, and stir to obtain a zinc ammine ion solution;

[0046] (3) Put the FTO glass substrate in step (1) into the zinc ammonium ion solution and deionized water in turn for 20 seconds, repeat the above process 3 times, and obtain the substrate with zinc ammonium ion adsorption ;

[0047] (4) At 200°C, heat the substrate with zinc ammonium ions adsorbed thereon for 0.5h, and form zinc oxide nano-crystal seeds on the substrate;

[0048] (5) Put the substrate formed with zinc oxide nano-seeds into the zinc ammonium ion solution, and place th...

Embodiment 2

[0052] The preparation method of the zinc oxide / cuprous oxide heterojunction of the present invention comprises the following steps:

[0053] (1) Wash the FTO glass substrate with acetone and ethanol, then ultrasonically clean it with deionized water for 30 minutes, and dry it with nitrogen gas for use;

[0054] (2) Prepare 100mL of zinc chloride solution with a concentration of 0.02mol / L, then add 3mL of ammonia water dropwise into this solution, and stir to obtain a zinc ammine ion solution;

[0055] (3) Put the FTO glass substrate in step (1) into the zinc ammonium ion solution and deionized water in turn for 30 seconds, repeat the above process 5 times, and obtain the substrate with zinc ammonium ion adsorption ;

[0056] (4) heating the substrate adsorbed with zinc ammonium ions at 350° C. for 1 hour, and forming zinc oxide nano-crystal seeds on the substrate;

[0057] (5) Put the substrate formed with zinc oxide nano-seeds into the zinc ammonium ion solution, and place...

Embodiment 3

[0061] The preparation method of the zinc oxide / cuprous oxide heterojunction of the present invention comprises the following steps:

[0062] (1) Wash the FTO glass substrate with acetone and ethanol, then ultrasonically clean it with deionized water for 30 minutes, and dry it with nitrogen gas for use;

[0063] (2) Prepare 100 mL of zinc chloride solution with a concentration of 0.04 mol / L, then slowly add 5 mL of ammonia water dropwise into this solution, and stir to obtain a zinc ammine ion solution;

[0064] (3) Put the FTO glass substrate in step (1) into the zinc ammonium ion solution and deionized water in turn for 40 seconds, repeat the above process 12 times, and obtain the substrate with zinc ammonium ion adsorption ;

[0065] (4) At 300°C, heat the substrate with zinc ammonium ions adsorbed thereon for 1.5 hours, and form zinc oxide nano-crystal seeds on the substrate;

[0066] (5) Put the substrate formed with zinc oxide nano-seeds into the zinc ammonium ion solu...

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Abstract

The invention provides a preparation method of a zinc oxide / cuprous oxide heterojunction. The method comprises the steps of: attaching ZnO crystal seeds on a substrate to realize firm combination between an n-type ZnO material and the substrate; placing the substrate, to which the ZnO material is attached, in a zinc-ammonia complex ion solution, and forming a ZnO nanorod array based on the growth of the ZnO crystal seeds by utilizing a hydrothermal method; and properly dissolving the surface of the ZnO nanorod array by selecting a proper solvent, so as to easily realize the combination and growth of a p-type Cu2O material on the ZnO nanorod array and guarantee the stability of the n-ZnO / p-Cu2O heterojunction.

Description

technical field [0001] The invention relates to a preparation method of a heterojunction, in particular to a preparation method of a zinc oxide / cuprous oxide heterojunction, and belongs to the field of chemical technology. Background technique [0002] With the rapid development of the photovoltaic industry, traditional silicon-based materials can no longer meet people's needs. Therefore, the commercial demand for new semiconductor optoelectronic materials and their devices is increasingly urgent. ZnO is a semiconductor material with wide bandgap (3.37eV) and high exciton binding energy (60meV), which has broad application prospects in ultraviolet lasers, solar cells, sensors, photocatalysis, etc. However, since ZnO cannot absorb visible light, and it is difficult to obtain p-type ZnO, the preparation and application of ZnO devices are greatly limited. [0003] In order to solve these problems, in the prior art, a wide bandgap ZnO semiconductor and a narrow bandgap semicond...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/34
Inventor 贾伟王丽平张竹霞党随虎董海亮许并社
Owner TAIYUAN UNIV OF TECH
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