Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of lanthanum-doped zinc oxide microsphere with wave absorbing performance

A technology of zinc oxide and microspheres, which is applied in chemical instruments and methods, zinc oxide/zinc hydroxide, and other chemical processes, to achieve wide application prospects, easy control of preparation parameters, and good wave-absorbing performance

Inactive Publication Date: 2013-08-28
NINGBO INST OF TECH ZHEJIANG UNIV ZHEJIANG
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the research on nano-ZnO materials doped with rare earth elements and nano-ZnO materials with a spherical structure mainly focuses on gas and pressure sensitivity, and there are few reports on the application of the above materials in wave-absorbing materials, especially the combination of two The combination of the former, that is, the doping of rare earth elements in the high-symmetry nanosphere ZnO has not yet been reported.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of lanthanum-doped zinc oxide microsphere with wave absorbing performance
  • Preparation method of lanthanum-doped zinc oxide microsphere with wave absorbing performance
  • Preparation method of lanthanum-doped zinc oxide microsphere with wave absorbing performance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Attached below Figure 1-3 And specific implementation mode the present invention is described in further detail:

[0019] A preparation method of lanthanum-doped nanostructured zinc oxide microspheres, comprising the following steps: step 1, after mixing equal volumes of 1mol / L zinc acetate and 6mol / L sodium hydroxide solution, adding distilled water 10 times the volume of the solution , ultrasonically vibrate for 10min, then add lanthanum nitrate, the molar ratio of lanthanum to zinc is La / Zn=0.5, and then ultrasonically vibrate for 10min; step 2, inject the resulting suspension into a stainless steel reaction kettle with polytetrafluoroethylene lining Put it in a constant temperature drying box, carry out hydrothermal crystallization at 168°C, and take it out of the reaction kettle after 19 hours of reaction; step 3, after cooling at room temperature, remove the supernatant, and centrifuge the solid powder Separate, wash three times with deionized water, pour the wa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
reflectanceaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method of lanthanum-doped zinc oxide microsphere with wave absorbing performance. The invention has the advantages that: firstly, the lanthanum-doped zinc oxide microsphere with perfect sphere shape and appearance is prepared innovatively by controlling the doping concentration, the reaction time, the reaction temperature, the solution alkalinity and the like; secondly, the lanthanum-doped zinc oxide microsphere has excellent performance and particularly has good wave absorbing performance as well as wide application prospect and important strategic significance as novel wave absorbing material; and thirdly, the raw materials for preparing the lanthanum-doped zinc oxide microsphere are conventional raw materials and readily available, the preparationmethod is simple and practical, and the preparation parameters are convenient to control.

Description

technical field [0001] The invention relates to a preparation method of zinc oxide, in particular to a lanthanum-doped nano-micron zinc oxide microsphere with wave-absorbing performance and a preparation method thereof. Background technique [0002] In recent years, ZnO, as an important II-VI group direct wide bandgap semiconductor oxide material, has attracted more and more attention because of its 3.37eV bandgap width and large exciton binding energy (up to 60meV). s concern. Due to its unique surface effect, volume effect, quantum effect and dielectric confinement effect, nanostructured ZnO has been widely studied in the fields of catalysis and optics. [0003] There are relatively few reports on the study of nanostructured ZnO as a new type of absorbing material. Nanostructured ZnO has strong absorption ability in the electromagnetic band, visible light band and infrared band, which can achieve the effect of avoiding radar and infrared stealth; at the same time, nano Z...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02C09K3/00
Inventor 张艳辉尚龙安王志锋
Owner NINGBO INST OF TECH ZHEJIANG UNIV ZHEJIANG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com