Aluminum pore-filling connection process

Abstract

The invention discloses an aluminum pore-filling connection process, which includes the steps: firstly, depositing a metal layer on a silicon slice; secondly, reacting metal deposited on the silicon slice with silicon by means of thermal annealing to form an alloy; thirdly, etching metal unreacted with the silicon by the aid of liquid chemicals through wet treatment; and fourthly, depositing an aluminum film to form an aluminum connection by means of etching. By the aid of the aluminum pore-filling connection process, aluminum film forming equipment is capable of depositing the aluminum film on the silicon slice to realize aluminum pore-filling at a common film forming temperature and a common film forming power, and cavities are not easy to form during aluminum pore-filling.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to an aluminum filling hole connection process. Background technique [0002] Aluminum is the back-end process of integrated circuit manufacturing. In the semiconductor manufacturing process, the aluminum filling and wiring process is a relatively mature technology with its stable process, relatively low cost performance and mature technology. a wide range of applications. Aluminum wiring can be used as a flat wiring to connect the gap, or directly as a filling material to replace the traditional tungsten plug. [0003] The conventional aluminum filling and wiring process is to directly deposit an aluminum film on a silicon wafer, and then use an etching method to form an aluminum wiring. Such as figure 1 As shown, when the upper half of the wall of the hole 12 to be filled on the silicon wafer is an oxide film (silicon dioxide) 11 and the opening is small, and the lower h...

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Problems solved by technology

like figure 1 As shown, when the upper half of the wall of the hole 12 to be filled on the silicon wafer is an oxide film (silicon dioxide) 11 and the opening is small, and the lower half is silicon 10 and the hole is larger, for such a hole, if The conventional aluminum filling and wiring process is used to directly deposit an aluminum film on the silicon wafer to fill the hole. Aluminum filling is easy to form voids. In order to prevent the formation of voids, it is generally used to reduce the deposition power (such as 1200W) and increase the deposition temperature (such as 480W). Celsius) method to fill the holes, but this will make the film forming rate lower, affect the throughput of the film forming equipment, and also require the aluminum film forming equipment to have a higher temperature control heating capacity

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