Novel gas-homogenizing structure

Abstract

The invention relates to the technical field of plasma etching, deposition, and neutral particle etching equipment, and particularly relates to a gas-homogenizing structure applicable to plasma or neutral particle etching systems. The gas-homogenizing structure is disposed at the lower part of a gas inlet pipe of a vacuum cavity; the gas-homogenizing structure comprises a gas-homogenizing cylinder; the gas-homogenizing cylinder adopts a double-layer cylindric structure of an inner gas-homogenizing cylinder and an outer gas-homogenizing cylinder which have coaxial centers and rotate mutually; the bottom of the gas-homogenizing cylinder is closed; gas-homogenizing holes are disposed on the inner gas-homogenizing cylinder and the outer gas-homogenizing cylinder. Under a plasma striking condition, the gas-homogenizing cylinder and a gas-homogenizing disc of the invention are in a sealed state; the increase of the gas density facilitates gas ionization and gas striking, can increase the striking speed; after striking, by rotating the upper and lower layers of the inner and the outer gas-homogenizing cylinders of the gas-homogenizing cylinder and the gas-homogenizing disc, the gas-homogenizing holes are exposed; plasma passes through the gas-homogenizing holes with gas flow and etches a chip; and the uniformity of the gas on the chip surface is improved.

Description

technical field [0001] The invention relates to the technical fields of plasma etching, deposition equipment and neutral particle etching, in particular to a uniform gas structure applied to a plasma or neutral particle etching system. Background technique [0002] In plasma processes such as etching and deposition, the inlet uniform gas structure not only determines the pressure and flow distribution of the process gas, but also has a great influence on the uniform distribution of the plasma generated by loading radio frequency ignition, thus affecting the processing chip. the quality of. [0003] In the etching process, the uniform gas structure generally adopts the inlet pipe to directly lead into the chamber, because the size difference between the inlet pipe and the chamber is relatively large. Alternatively, process some uniformly distributed small holes on the wall of the intake pipe. After intake, the pressure and flow gradient of the gas is relatively large. In t...

AI Technical Summary

Problems solved by technology

In this way, after radio frequency loading, it is difficult to guarantee the uniformity of the plasma obtained by the ignition

When processing chips, due to the poor gas uniformity effect of the intake structure, the gas distribution gradient in the horizontal direction inside the chamber is relatively large, resulting in uneven density distribution of the plasma on the chip surface, resulting in inconsistent etching chip surface and etching rate uniformity

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