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Epitaxial Ti0.53Cr0.47N film material with low-temperature magneto-resistance effect, and preparation method thereof

A technology of epitaxial thin film and magnetoresistance, which is applied in the direction of coating with magnetic layer, metal material coating process, magnetic recording, etc., to achieve the effect of simple and practical method, simple target material selection and high target material utilization rate

Active Publication Date: 2012-04-18
TIANJIN UNIV
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  • Claims
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Problems solved by technology

But so far, there is no relevant report on the preparation of Cr-doped TiN epitaxial thin films by sputtering.

Method used

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  • Epitaxial Ti0.53Cr0.47N film material with low-temperature magneto-resistance effect, and preparation method thereof
  • Epitaxial Ti0.53Cr0.47N film material with low-temperature magneto-resistance effect, and preparation method thereof
  • Epitaxial Ti0.53Cr0.47N film material with low-temperature magneto-resistance effect, and preparation method thereof

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Embodiment Construction

[0032] According to the structure and property analysis that we carry out to the sample prepared in the present invention, below will prepare Ti to target reactive sputtering method 0.53 Cr 0.47 The best implementation mode of N epitaxial thin film is described in detail:

[0033] 1. The DPS-III type ultra-high vacuum facing target magnetron sputtering coating machine produced by the Shenyang Scientific Instrument Development Center of the Chinese Academy of Sciences is adopted. The base material is MgO (100) single wafer, and a pair of purity is installed on the facing target head. For 99.99% Ti target, one end is used as the N pole of the magnetic force line, and the other end is the S pole; the thickness of the Ti target is 4mm, and the diameter is 60mm; in order to incorporate Cr, evenly place Cr sheets on the surface of the Ti target, and the area of ​​the Cr sheets is 6mm 2 , the number of Cr sheets is 200, and the atomic percentage content of Cr relative to the sum of...

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Abstract

The invention relates to an epitaxial Ti0.53Cr0.47N film material with a low-temperature magneto-resistance effect, and a preparation method thereof. The epitaxial film material is Ti0.53Cr0.47N. Under a temperature of 5K and a magnetic field of 50kOe, the magneto-resistance is 6%. According to the invention, a DPS-II ultra-high-vacuum target-facing magnetron sputtering machine produced by Shenyang Scientific Instrument Manufacturing Center of Chinese Academy of Sciences is adopted; a substrate material is an MgO (100) single crystal wafer; a pair of Ti targets with a purity of 99.99% are arranged on a faced target head, wherein one end serves as an N pole of magnetic line of force, and the other end serves as an S pole of the magnetic line of force; Cr sheets are uniformly arranged on the surfaces of the Ti targets; conditions such as vacuum pumping, pre-sputtering, temperature adjusting, and current and voltage controlling are selected; and an epitaxial Ti0.53Cr0.47N film sample grown on the MgO substrate material is prepared. The film provided by the invention has a low-temperature magneto-resistance effect. The adopted method is simple and practicable, and is beneficial for the popularization in industrialized productions.

Description

technical field [0001] The invention relates to spintronics material technology, especially a novel ferromagnetic material with high spin polarizability and its preparation method, more specifically, a Ti material with low-temperature magnetoresistance effect 0.53 Cr 0.47 N epitaxial thin film material and preparation method. Background technique [0002] In recent years, spintronic materials have attracted much attention due to their great application prospects in magnetic information storage and reading. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg, the pioneers of spintronics. Now, how to obtain high spin-polarized current is still one of the hot issues in the field of spintronics. The main way to obtain high spin injection is to select electrode materials with high spin polarizability, especially ferromagnetic materials with high spin polarizability that can be combined with semiconductor materials. [0003] First-principles calculati...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/35G11B5/65G11B5/851
Inventor 米文博段秀峰白海力
Owner TIANJIN UNIV
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