Metal porphyrin-anthracene organic semiconductor material as well as preparation method and application thereof
A technology of organic semiconductors and metalloporphyrins, applied in semiconductor/solid-state device manufacturing, semiconductor devices, organic chemistry, etc., can solve the problems of limiting the application range of organic semiconductor materials, lack of literature and patent reports, etc., and achieve good thermal stability and Environmental stability, good electronic buffering and optoelectronic magnetism, effect of expanding application range
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0050] The preparation method of metalloporphyrin-anthracene organic semiconductor material designed by the present invention, the steps are as follows:
[0051] In step S1, under the condition that the oxidizing agent and the first catalyst exist, the structural formula is The dipyrromethane, the structural formula is The first silafluorene derivative and the structural formula are The second silfluorene derivative is dissolved in the first organic solvent, and reacted for 1-24 hours at a temperature of 20-100° C. to obtain the structural formula: The silicon fluorene porphyrin derivatives; in the formula, R 1 , R 2 , R 3 , R 4 for H, C 1 -C 32 Alkyl, phenyl, containing one or more C 1 -C 32 Alkylbenzene or alkoxybenzene; the reaction formula is as follows:
[0052]
[0053] Step S2, adding the silicon fluorene porphyrin derivative and brominating agent obtained in step S1 into the second organic solvent, and reacting at 0-120° C. for 1-72 hours to obtain the...
Embodiment 1
[0079] This embodiment discloses a silicon fluorene zinc porphyrin-anthracene organic semiconductor material with the following structure
[0080]
[0081] In the above formula, n=78;
[0082] The preparation steps of the above-mentioned organic semiconductor material are as follows:
[0083] 1. Synthesis of 9,10-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolane) anthracene
[0084]
[0085] in N 2 Under the protection of the three-necked flask, add 10 g of p-9,10-dibromoanthracene, add 250 ml of tetrahydrofuran (THF, the same below) solvent, and slowly inject n-butyllithium (n- BuLi, the same below) 25.2mL (2.5M), continue to stir the reaction for 2 hours, inject 2-isopropoxy-4,4,5,5-tetramethyl-1,3 with a syringe at -78°C, 13 mL of 2-dioxaborane was stirred overnight at room temperature. The reaction was terminated by adding saturated aqueous sodium chloride solution, extracted with chloroform, dried over anhydrous sodium sulfate, and the filtrate was collected after suc...
Embodiment 2
[0104] This embodiment discloses a silicon fluorene iron porphyrin-anthracene organic semiconductor material with the following structure
[0105]
[0106] In the above formula, n=56;
[0107] The preparation steps of the above-mentioned organic semiconductor material are as follows:
[0108] 1. Synthesis of 9,10-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolane) anthracene
[0109] Its preparation sees embodiment 1 for details.
[0110] 2. Synthesis of 5-(9'-methyl-9'-hexadecyl)silafluorene-15-(9'-docosyl)silafluorene porphyrin
[0111]
[0112] Set up an anhydrous and oxygen-free device, weigh the intermediates 2-aldehyde-9-methyl-9-hexadecylsilafluorene (0.45g, 1mmol), 2-aldehyde-9-docosylsilafluorene ( 0.66g, 1mmol), dipyrromethane (0.30g, 2mmol), dissolved in 250ml of dichloromethane, blown nitrogen for 30min, added 2ml of trifluoroacetic acid into the syringe, stirred at 100°C for 1h, then added dichlorodicyanobenzene Quinone (DDQ) (1.82g, 8mmol), continue stirring a...
PUM
Property | Measurement | Unit |
---|---|---|
hole mobility | aaaaa | aaaaa |
electrical resistance | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com