A New Gate Modulation Readout Circuit Structure

Abstract

The invention discloses a novel gate modulation reading circuit structure, comprising a signal reading module, an integrating capacitor and a resetting switch as well as a direct current offset eliminating module, wherein the direct current offset eliminating module comprises a dark unit, a dark unit direct current offset circuit, a second gate modulation NMOS (N-channel metal oxide semiconductor) tube and a current mirror; the gate terminal of the second gate modulation NMOS tube is connected with a direct current offset level of the dark unit; and the input terminal of the current mirror is connected with the drain terminal of the second gate modulation NMOS tube of the direct current offset eliminating module, and the output terminal of the current mirror is connected with the drain terminal of a first modulation NMOS tube of the signal reading module. By applying the novel gate modulation reading circuit structure disclosed by the invention, direct current on the integrating capacitor is effectively eliminated, dynamic range of the reading circuit is widened and the sensitivity of system is improved; meanwhile, no fixed pattern noise can be introduced. Besides, a manner that a cascade tube is introduced is adopted in the invention, thus a circuit can effectively inhibit the short channel effect and the novel gate modulation reading circuit structure disclosed by the invention is applicable to an advanced deep submicron integrated circuit manufacturing process.

Description

technical field [0001] The invention relates to a novel gate modulation readout circuit structure, which belongs to the field of weak signal detection. Background technique [0002] With the continuous improvement of the level of science and technology, the process technology of integrated circuits has been developed, which provides a guarantee for the arraying of sensors and their readout circuits. With the continuous deepening of the application of the Internet of Things in various fields of the nation, people's requirements for information collection systems have also changed from a single sensor to a sensor array. This requires that the readout circuit of the sensor must also meet the requirements of a large-scale area array. The specific performance is that the circuit is simpler, it is easier to realize the integration of the area array, and it has higher sensitivity. [0003] In order to meet the needs of the area array readout circuit, Mitsubishi Corporation of Jap...

AI Technical Summary

Problems solved by technology

More advanced production technology means smaller feature size of MOS transistors, which will inevitably introduce short channel effects

and figure 1 and figure 2 The two circuits cannot effectively suppress the short channel effect, and will not be suitable for advanced deep submicron integrated circuit technology

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