Pollution prevention device

Abstract

The invention discloses a pollution prevention device, relating to the technical field of semiconductor wafer processes. The device comprises a purging unit, a gas supply line and a gas supply unit, wherein a vent pipe is arranged in the purging unit; a plurality of first pores are arranged at the upper end of the purging unit and are respectively communicated with the vent pipe; one end of the gas supply line is communicated with the vent pipe; and the other end of the gas supply line is communicated with the gas supply unit. The device has the following beneficial effects: by arranging the purging unit, the cleaning fluid and cleaning products are prevented from entering into the back of the wafer from the edges of the wafer, thus preventing defects from being formed on the back and edges of the wafer.

Description

technical field [0001] The invention relates to the technical field of semiconductor wafer technology, in particular to an anti-pollution device. Background technique [0002] As the size of the wafer becomes larger and the feature size becomes smaller and smaller, the required cleanliness of the wafer surface becomes more and more stringent. During the wafer cleaning process, chemical reagents and cleaning products easily enter the back of the wafer along the edge of the wafer, causing contamination on the back and edge of the wafer. If this pollution cannot be removed in time, it will cause defects on the back and edge of the wafer, especially in the subsequent high-temperature treatment. During the process, the pollutants on the back and edge will diffuse to the front, seriously affecting the quality of the wafer. However, in the prior art, there is no device that can effectively prevent the contamination of the back and edge of the wafer, so that the quality of the wafer...

AI Technical Summary

Problems solved by technology

During the wafer cleaning process, chemical reagents and cleaning products easily enter the back of the wafer along the edge of the wafer, causing contamination on the back and edge of the wafer. If this pollution cannot be removed in time, it will cause defects on the back and edge of the wafer, especially in the subsequent high-temperature treatment. During the process of processing, the pollutants on the back and edge will diffuse to the front, seriously affecting the quality of the wafer. However, in the existing technology, there is no device that can effectively prevent the contamination of the back and edge of the wafer, so that the quality of the wafer cannot be further improved.

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