Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Media-compatible electrically isolated pressure sensor for high temperature applications

A technology of pressure sensor and sensing element, which is applied in the measurement of fluid pressure by changing ohmic resistance, the measurement of fluid pressure through electromagnetic elements, and the measurement of fluid pressure, etc., can solve problems such as complex methods

Inactive Publication Date: 2012-02-01
NAGANO KEIKI
View PDF11 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is complex and uses capacitive sensors and polysilicon connections

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Media-compatible electrically isolated pressure sensor for high temperature applications
  • Media-compatible electrically isolated pressure sensor for high temperature applications
  • Media-compatible electrically isolated pressure sensor for high temperature applications

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Those of ordinary skill in the art should appreciate that the following description is only exemplary and not intended to limit any method. Other examples will readily demonstrate the benefits of the invention to the skilled artisan. Description will now be made in detail with reference to exemplary embodiments illustrated in the accompanying drawings. The same reference numerals will be used throughout the drawings, and the following description will refer to the same or similar serial numbers.

[0033] Various types of semiconductor fabrication equipment may be used to implement the components and method steps described herein in accordance with the present invention. It should be understood that the term "embodiment" includes more than one embodiment, and therefore is not limited to one embodiment.

[0034] The embodiments describe pressure sensors that can be used over a wide range of temperatures and pressures, including in the automotive field, as compared to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A pressure sensor is described with sensing elements electrically and physically isolated from a pressurized medium. An absolute pressure sensor has a reference cavity, which can be at a vacuum or zero pressure, enclosing the sensing elements. The reference cavity is formed by bonding a recessed cap wafer with a gauge wafer having a micromachined diaphragm. Sensing elements are disposed on a first side of the diaphragm. The pressurized medium accesses a second side of the diaphragm opposite to the first side where the sensing elements are disposed. A spacer'wafer may be used for structural support and stress relief of the gauge wafer. In one embodiment, vertical through-wafer conductive vias are used to bring out electrical connections from the sensing elements to outside the reference cavity. In an alternative embodiment, peripheral bond pads on the gauge wafer are used to bring out electrical connections from the sensing elements to outside the reference cavity. In various embodiments, a regular silicon-on-insulator wafer or a double silicon-on-insulator wafer may be used as the gauge wafer, and appropriate micromachining steps are adopted to define the diaphragm. A layer of corrosion resistant material is deposited on the surface of the diaphragm that is accessed by the pressurized medium.

Description

technical field [0001] The present invention relates generally to pressure sensing devices and, more particularly, to pressure sensing elements in malignant and / or electrically conductive pressurized media at elevated temperatures. Background technique [0002] Diaphragm pressure sensors have been widely used in which pressure applied by a pressurized medium deflects a diaphragm, and a sensing element (such as a strain gauge) coupled to the diaphragm detects the deflection and provides feedback to correct the diaphragm. The inclined signal provides some pressure. [0003] There are two main types of pressure sensors. The first type is known as a differential pressure sensor, which measures pressure relative to atmospheric pressure. The second type is known as an absolute pressure sensor, which typically measures pressure relative to vacuum or zero pressure. [0004] Figures 1A and 1B illustrate a conventional differential pressure sensor 100 and a conventional absolute pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01L9/06
CPCG01L19/147B81C1/00158G01L9/0042G01L9/0055Y10T29/49126Y10T29/42Y10T29/49005Y10T29/49165Y10T29/49007
Inventor 詹姆斯·钱蒙·萨敏图穆罕默德·于纳斯
Owner NAGANO KEIKI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products