Method for forming microelectro mechanical system (MEMS) device

A device and patterning technology, applied in the field of MEMS, can solve the problems of easy sliding of the film layer, difficult removal of the photoresist layer, and easy contamination of the chamber when the photoresist layer is removed. good compatibility

Active Publication Date: 2012-01-25
XIAN YISHEN OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The problem solved by the present invention is that when the method for forming MEMS devices in the prior art uses a photoresist layer as a sacrificial layer, the photoresist layer is more difficult to remove, and it is easy to pollute the chamber when removing the photoresist layer; use amorphous carbon as a sacrificial layer layer, the film layer formed on it is easy to slide

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  • Method for forming microelectro mechanical system (MEMS) device
  • Method for forming microelectro mechanical system (MEMS) device
  • Method for forming microelectro mechanical system (MEMS) device

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Embodiment Construction

[0027] The method for forming a MEMS device according to a specific embodiment of the present invention uses amorphous carbon as a sacrificial layer to form a first film layer whose material is silicon germanium, germanium or silicon on the patterned amorphous carbon layer, and the first film layer after patterning Membranes serve as movable parts in MEMS devices.

[0028] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0029] In the following description, specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways than those described here, and those skilled in the art can make similar extensions without departing from the connotation of the present invention. Accordingly, the p...

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Abstract

The invention relates to a method for forming a microelectro mechanical system (MEMS) device. The method comprises the following steps of: providing a base, wherein the base is provided with fixed parts; forming a patterned amorphous carbon layer on the base; forming a first film layer on the patterned amorphous carbon layer, wherein the material of the first film layer comprises silicon germanium, germanium or silicon; patterning the first film layer to form a movable part; and removing the patterned amorphous carbon layer. The patterned amorphous carbon layer is easy to remove and does not pollute a chamber; the patterned amorphous carbon layer serves as a sacrificial layer, so the processing compatibility is high; and the adhesivity of the first film layer made of silicon germanium, germanium or silicon and the amorphous carbon layer is high, so the sliding phenomenon between the first film layer and the amorphous carbon layer does not occur.

Description

technical field [0001] The invention relates to the field of MEMS, in particular to a method for forming a MEMS device. Background technique [0002] Microelectromechanical systems (MEMS for short) is a multi-disciplinary frontier research field developed on the basis of microelectronics technology. It is a technology that uses semiconductor technology to manufacture microelectromechanical devices. Compared with traditional electromechanical devices, MEMS devices have obvious advantages in high temperature resistance, small size, and low power consumption. After decades of development, it has become one of the world's major scientific and technological fields. It involves electronics, machinery, materials, physics, chemistry, biology, medicine and other disciplines and technologies, and has broad application prospects. [0003] MEMS devices generally include fixed parts and movable parts, and the formation method of MEMS devices is usually: provide substrate, be formed with...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 毛剑宏唐德明
Owner XIAN YISHEN OPTOELECTRONICS TECH CO LTD
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