A p-i-n type single-junction ingan solar cell
A p-i-n, solar cell technology, applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of photoelectric conversion efficiency to be improved, less carrier collection, affecting service life, etc., to improve photoelectric conversion efficiency and improve radiation resistance capacity, prolonging the service life
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[0020] In order to further understand the technical content, characteristics and effects of the present invention, the following examples are given, and detailed descriptions are as follows in conjunction with the accompanying drawings:
[0021] See attached Figure 1-Figure 3 .
[0022] Firstly, GaN nucleation layer 2, GaN buffer layer 3, n-GaN layer 4, i-In x Ga 1-x The specific manufacturing process of the N layer 6 and the p-GaN layer 7 is as follows:
[0023] GaN nucleation layer, the growth temperature is 500-650°C, and the thickness range is 10-35nm. This layer can increase the nucleation density on the substrate surface;
[0024] GaN buffer layer, the growth temperature is 950-1100℃, and the thickness range is 1-2.5μm. This layer can reduce the defect density of the epitaxial layer, thereby improving the crystal quality;
[0025] Si-doped n-GaN layer, the growth temperature is 600-1100°C, and the doping concentration is 1×10 18 -1×10 19 cm -3 , the thickness ran...
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