Infrared absorption structure and uncooled infrared detector based on infrared absorption structure

Abstract

The invention discloses an infrared absorption structure and an uncooled infrared detector based on the infrared absorption structure. The structure is composed of a bottom infrared reflecting layer with high conductivity, a first insulating layer, an infrared sensitive layer, a second insulating layer and a surface structure layer, wherein the above-mentioned layers are overlaid successively. The surface structure layer is manufactured by nonmetal conductive materials and has an island-like array structure in a circle or square shape, wherein the array structure is distributed according to two-dimension period. On the basis of the structure of the surface structure layer, it is easy to design a high-infrared absorption structure with a certain spectral width by selecting an appropriate surface conductive property; meanwhile, an infrared response of wide angle can be obtained. An infrared detector based on the infrared absorption structure has advantages of low thermal mass and no limitation of a cavity height of thermal insulation. Moreover, the infrared absorption structure is not sensitive to an incident angle of infrared radiation. Therefore, the infrared absorption structurecan be widely applied to fields including an infrared biochemical sensor, an infrared spectrometer, and an uncooled infrared thermal imaging system and the like.

Description

technical field [0001] The invention belongs to thermal radiation infrared detection technology, in particular to a multi-layer infrared absorption structure with low thermal mass, wide angle and high infrared absorption rate and a non-cooling infrared detector based on the structure. Background technique [0002] Uncooled infrared detectors use the thermal infrared radiation of target objects for target detection. The principle is that the photosensitive area of ​​the infrared detector absorbs the thermal infrared radiation incident from the outside to increase the temperature of the photosensitive element itself. The temperature-increased photosensitive element converts its own temperature change into a certain physical, chemical or electrical characteristic change of its properties and forms a detection through an external detection system. Compared with cooled infrared detectors, uncooled infrared detectors have the advantages of low price, small size, light weight, and...

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Problems solved by technology

[0006] In order to solve the above problems, the invention provides a kind of infrared absorbing structure, and this structure has high absorptivity in the long-wave band (8~12 microns), and is insensitive to the incident angle of infrared radiation, has wide-angle absorption characteristic; The invention also provides An uncooled infrared detector based on this structure is developed, which eliminates the problem of poor uniformity of infrared response caused by cavity length distortion

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