White-light organic luminescent device and manufacturing method thereof
An electroluminescent device, organic technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, luminescent materials, etc., can solve the problems of unsuitability for preparation, weakening of light intensity, etc. Effect
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Embodiment 1
[0053] Such as figure 1 As shown, the color conversion layer 10 in the device structure is a kind of aggregation-induced luminescence yellow light material 1DPAFO, the hole transport material is NPB, the electron transport material is Bphen, the host in the blue light emitting layer 51 is MCP, the guest is FIr6, and the cathode The layer is a Mg:Ag alloy. The entire device structure is described as:
[0054] Yellow color conversion layer 1DPAFO(150nm) / glass substrate / ITO / NPB(40nm) / MCP:8%FIr6(20nm) / Bphen(40nm) / Mg:Ag(200nm)
[0055] The preparation method is as follows:
[0056] ①Use detergent, ethanol solution and deionized water to ultrasonically clean the transparent conductive substrate ITO glass, and dry it with dry nitrogen after cleaning. The ITO film on the glass substrate is used as the anode layer of the device, the square resistance of the ITO film is 10Ω / sq, and the film thickness is 180nm;
[0057] ② Use chloroform as a solvent to configure the solution of the c...
Embodiment 2
[0065] Such as figure 1 As shown, the color conversion layer 10 in the device structure is a kind of aggregation-induced luminescent yellow light material 1DPAFO, the hole transport material is TAPC, the electron transport material is Bphen, the host in the blue light emitting layer 51 is TAPC, and the guest is FIr6, The cathode layer is a Mg:Ag alloy. The entire device structure is described as:
[0066] Yellow color conversion layer 1DPAFO(300nm) / glass substrate / ITO / TAPC(30nm) / TAPC:10%FIr6(30nm) / Bphen(40nm) / Mg:Ag(200nm)
[0067] The preparation process is similar to Example 1.
Embodiment 3
[0069] Such as figure 1 As shown, the color conversion layer 10 in the device structure is a kind of aggregation-induced luminescence yellow light material 2DPAFO, the hole transport material is TAPC, the electron transport material is 3TPYMB, the host in the blue light emitting layer is TBADN, and the guest is DSA-Ph , the cathode layer is Mg:Ag alloy. The entire device structure is described as:
[0070] Yellow color conversion layer 2DPAFO(800nm) / glass substrate / ITO / TAPC(50nm) / TBADN:15%DSA-Ph(20nm) / 3TPYMB(40nm) / Mg:Ag(200nm)
[0071] The preparation process is similar to Example 1.
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