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Power semiconductor device for igniter

A technology for power semiconductors and igniters, applied in semiconductor devices, spark ignition controllers, other devices, etc., can solve problems such as engine backfire or knocking, and achieve the effect of reducing joule loss

Inactive Publication Date: 2011-09-14
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, with the cut-off operation of the overheating protection function, ignition occurs at an inappropriate timing in the ignition sequence, and problems such as engine backfire or knocking sometimes occur.

Method used

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  • Power semiconductor device for igniter
  • Power semiconductor device for igniter
  • Power semiconductor device for igniter

Examples

Experimental program
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Effect test

Embodiment 1

[0021] figure 1 is a schematic diagram of one embodiment of the ignition system of the present invention. exist figure 1 In the ignition system, one end of the primary coil 61 of the ignition coil 6 is connected to a power source Vbat such as a battery, and the other end is connected to the power semiconductor device 5 for the igniter. In addition, one end of the secondary coil 62 is also connected to the power supply Vbat, and the other end is connected to the ignition plug 7 whose one end is grounded. Further, the ECU 1 outputs a control input signal for driving the semiconductor switching element 41 to the power semiconductor device for the igniter.

[0022] Among them, the power semiconductor device 5 for an igniter includes: a semiconductor switching element 4 including an IGBT 41 that energizes / disconnects the current flowing to the primary coil 61; The operating conditions drive and control the IGBT41.

[0023] In the IGBT41, which is the main component of the semic...

Embodiment 2

[0043] Figure 5 A second embodiment of the power semiconductor device for an igniter of the present invention is shown. In the drawings, components having the same functions are denoted by the same reference numerals, and repeated explanations are omitted.

[0044] The second embodiment is characterized in that the Schottky barrier diode mounted on the semiconductor switching element 4 in the first embodiment is mounted in the integrated circuit 3 . In the power semiconductor device 5 for an igniter, the semiconductor switching element 4 and the integrated circuit 3 are arranged adjacently on the same conductive substrate, and the thermal bonding property of both is extremely good. Therefore, the same effect can be obtained even if the temperature measuring element is not mounted on the semiconductor switching element 4 .

[0045] The Schottky barrier diode 25 in the integrated circuit 3 is preferably mounted near the semiconductor switching element 4 in the layout, for exa...

Embodiment 3

[0050] Figure 6 A third embodiment of the power semiconductor device for an igniter of the present invention is shown. In Embodiment 1 and Embodiment 2, due to the variation in the manufacturing process of the reverse saturation current of the Schottky barrier diode, the current limit value at the time of overheat protection may not be able to obtain the desired drop characteristic. By adjusting this deviation with the external connection terminal, not only can the yield of the product be improved, but also the attenuation sensitivity of the current limit value corresponding to the application of the product can be adjusted.

[0051] Figure 6 In the shown circuit example, three temperature-measuring element selection circuits S1, S2, and S3 with different output current values ​​are provided to enable / disable the output of each temperature-measuring element from outside the igniter power semiconductor device 5 .

[0052] Each temperature measuring element selection circuit...

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PUM

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Abstract

The present invention relates to a power semiconductor device for an igniter, which protect a semiconductor switch member in the overheat state and avoid the error ignition occurring at an inappropriate time followed by the current shut off. A power semiconductor device 5 for an igniter comprises: a semiconductor switching device 4 causing a current to flow through a primary side of an ignition coil 6 or shutting off the current flowing through the primary side of the ignition coil; an integrated circuit 3 driving and controlling the semiconductor switching device; and a temperature sensing element 43 sensing temperature of the semiconductor switching device 4, wherein the integrated circuit including an overheat protection circuit limiting a current through the semiconductor switching device to a value lower than a current through the semiconductor switching device 4 during normal operation, when temperature sensed by the temperature sensing element 43 is over predetermined temperature.

Description

technical field [0001] The invention relates to a power semiconductor device for an igniter with an overheat protection function, which protects a semiconductor switching element when the temperature is abnormally high in an ignition system of an internal combustion engine. Background technique [0002] The ignition system for an internal combustion engine such as an automobile engine is composed of a power semiconductor device, the so-called igniter, and an engine control unit (ECU) of a computer. The power semiconductor device is equipped with an ignition coil ( Inductive load) and the semiconductor switching element that drives it and its control circuit element (semiconductor integrated circuit). Often, when abnormal heating occurs during its operation, in order to protect the semiconductor switching element, an overheating protection function is mounted to detect the abnormal heating and forcibly cut off the current flowing in the semiconductor switching element (for ex...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/72
CPCF02P3/0554H01L2924/0002H01L2924/00
Inventor 神户伸介安田幸央河本厚信
Owner MITSUBISHI ELECTRIC CORP
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