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Quasi-periodic photonic crystal structure at top of vertical cavity surface emitting laser (VCSEL)

A technology of vertical cavity surface emission and photonic crystals, which is applied to laser components, lasers, semiconductor lasers, etc., can solve the problems of low divergence angle, high parallel coupling efficiency of beams, etc., and achieve easy preparation, high coupling efficiency and simple structure Effect

Inactive Publication Date: 2011-08-24
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of this, the main purpose of the present invention is to provide a quasi-periodic photonic crystal structure on the top of the vertical cavity surface emitting laser, to solve the design and manufacture problems of the top crystal structure of the vertical cavity surface emitting laser, and to achieve a higher light beam at the same time. Purpose of Parallel Coupling Efficiency and Lower Divergence Angle

Method used

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  • Quasi-periodic photonic crystal structure at top of vertical cavity surface emitting laser (VCSEL)
  • Quasi-periodic photonic crystal structure at top of vertical cavity surface emitting laser (VCSEL)
  • Quasi-periodic photonic crystal structure at top of vertical cavity surface emitting laser (VCSEL)

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Embodiment

[0031] In this embodiment, the quasi-periodic photonic crystal structure at the top of the VCSEL works at a wavelength of 826.9 nm. This embodiment adopts figure 1 The vertical cavity surface emitting laser shown has 34.5 layers in the lower DBR, 20.5 layers in the upper DBR, and a quasi-periodic photonic crystal structure on the top as the light field modulation unit. The period Λ=5 μm, the duty ratio is r / A=0.3, and the depth h=1.254μm such as figure 2 Twelve-fold quasi-periodic photonic crystal structures with circular holes.

[0032] The near field obtained by the simulation calculation of this embodiment is as follows image 3 As shown, the parallel coupling of defect cavities is realized. The far field is shown in Figure 4. It can be clearly seen that the far-field divergence angle is less than 4 degrees, realizing the modulation of the far-field divergence angle.

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Abstract

The invention relates to the technical field of semiconductor photoelectronic devices and discloses a quasi-periodic photonic crystal structure at the top of a vertical cavity surface emitting laser (VCSEL). The structure comprises a two-dimensional quasi-periodic photonic crystal structure which is realized in the way that round pores or elliptic pores are etched on a semiconductor material at the top of the VCSEL, and the pores are filled with low-refractive-index material. The quasi-periodic photonic crystal structure is utilized to realize parallel coupling among optical cavities by coupled waves, improve the coupling efficiency and realize modulation for a far-field angle of divergence.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a quasi-periodic photonic crystal structure on the top of a vertical cavity surface emitting laser. Background technique [0002] Vertical-cavity surface-emitting lasers are key devices for optical network information transmission, optical interconnection, optical storage and laser printing, especially photonic crystal vertical-cavity surface-emitting lasers, which have become one of the focuses of research on vertical-cavity surface-emitting lasers in recent years. The weak refractive index change introduced by the photonic crystal forms a weak refractive index waveguide structure to select the fundamental transverse mode output and suppress the high-order mode. However, it is difficult to obtain higher power for a single VCSEL with single-mode characteristics, and a coupled laser array provides a way to increase the single-mode output power and furt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183
Inventor 张建心刘安金江斌付非亚渠红伟郑婉华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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