Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memory and memory read-write control method and system

A technology of memory and storage area, applied in the field of storage, can solve the problem of not making full use of SLC flash memory and MLC flash memory data read and write speed, and achieve the effect of improving read and write speed and convenient use

Inactive Publication Date: 2011-08-03
SHENZHEN NETCOM ELECTRONICS CO LTD
View PDF6 Cites 26 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the embodiments of the present invention is to provide a kind of memory, aiming at solving the problem that the hybrid memory in the prior art is only the integration of SLC flash memory and MLC flash memory, and does not make full use of the respective advantages of SLC flash memory and MLC flash memory to improve the reading and writing of data speed problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory and memory read-write control method and system
  • Memory and memory read-write control method and system
  • Memory and memory read-write control method and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0027] The memory provided by the embodiment of the present invention includes at least one single-level cell SLC flash memory and at least one multi-level cell MLC flash memory, the storage area of ​​the SLC flash memory is set as the storage area before the logical address of the memory, and the storage area of ​​the MLC flash memory The storage area is set as the storage area behind the logical address of the memory, wherein the MLC flash memory includes but not limited to more bits of flash memory such as 2bit / cell, 3bit / cell, 4bit / cell, etc., which is not intended to limit the present invent...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention is applied in the technical field of storage, and provides a memory, a memory read-write control method and a memory read-write control system. The memory comprises at least one single-level cell (SLC) flash memory and at least one multi-level cell (MLC) flash memory, wherein the storage region of the SLC flash memory is set as a logic address forward storage region of the memory, and the storage region of the MLC flash memory is set as a logic address backward storage region of the memory. According to the embodiment, perfect combination of respective advantages of the SLC flash memory and the MLC flash memory is realized, the data read-write speed of the memory is improved by fully using the respective advantages of the SLC flash memory and the MLC flash memory, and convenience is brought to a user in use.

Description

technical field [0001] The invention belongs to the technical field of storage, and in particular relates to a memory and a method and system for controlling reading and writing of the memory. Background technique [0002] Memory can be divided into single-level cell (Single-Level Cell, SLC) flash memory and multi-level cell (Multi-Level Cell, MLC) flash memory according to its specific composition framework, wherein, pure SLC flash memory has read / write speed The advantages of high speed and long life, but there are also disadvantages of high price and low storage capacity; the capacity of pure MLC flash memory can be made large, and the price is cheap, but the read / write speed of MLC flash memory is slow and the life is short . [0003] Patent application number 200680051435.2 discloses a portable data storage device integrated with multiple flash memory units, the portable data storage device includes at least one SLC flash memory and at least one MLC flash memory to int...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F12/02G11C11/56
Inventor 李志雄蒋云南李中政
Owner SHENZHEN NETCOM ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com