Semiconductor device and manufacturing method thereof

Abstract

The invention provides a semiconductor device, comprising a semiconductor substrate having an optical device area and an electrical device area, a light guide layer formed by etching the optical device area, a first oxide layer formed in the semiconductor substrate below the light guide layer, and a third oxide layer covering the surface of the light guide layer. The invention further provides a manufacturing method of the semiconductor device, which comprises the steps of: providing the semiconductor substrate, wherein the semiconductor substrate comprises the optical device area and the electrical device area; etching the optical device area to form the light guide layer; then forming a second oxide layer on the surface of the light guide layer and removing the second oxide layer by means of wet etching; forming the third oxide layer covering the surface of the light guide layer; and finally, injecting oxygen ions into the semiconductor substrate in order to form the first oxide layer in the semiconductor substrate below the light guide layer. According to the semiconductor device and the manufacturing method thereof, light leakage of the semiconductor device can be avoided, and more convenience can be brought to the integration of an optical device base plate and an electrical device base plate on the same semiconductor device.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] At present, semiconductor devices are widely used in various modern electronic devices such as liquid crystal display devices, mobile phones, and personal digital assistants due to their high integration, low power consumption, and small size. Generally, a semiconductor device is obtained through the following manufacturing processes: first, a semiconductor device having a plurality of integrated circuits is formed; then, each integrated circuit of the semiconductor device is tested; finally, each integrated circuit is cut from the semiconductor device and Made into semiconductor devices. Currently, there are many different methods of fabricating semiconductor devices. [0003] For details, please refer to Figure 1a~1e , which is a schematic cross-sectional view of the corre...

AI Technical Summary

Problems solved by technology

[0012] The purpose of the present invention is to provide a semiconductor device and its manufacturing method to solve the problem of light leakage when making optical devices in the prior art, and the problem that optical devices and electrical devices cannot be effectively integrated on the same semiconductor device

Images