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Erasing and writing method for FLASH memory

A FLASH memory, data frame technology, applied in the protection of storage content to prevent loss, memory address/allocation/relocation, etc., can solve the problems of complex circuit design, high cost, and occupied space, saving PCB space, Fast, cost-effective results

Inactive Publication Date: 2011-04-27
SHENZHEN JIUZHOU ELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

FLASH is often used to store programs and data that does not change. EEPROM is often used to store user settings and data that will change. Generally, FLASH and EEPROM exist at the same time, occupying a lot of space on the PCB, the circuit design is relatively complicated, and the cost is high. , so it is not optimized for all situations where program code and user setting data need to be saved

Method used

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  • Erasing and writing method for FLASH memory
  • Erasing and writing method for FLASH memory
  • Erasing and writing method for FLASH memory

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Embodiment Construction

[0028] Such as figure 1 Shown, in the erasing and writing method of FLASH memory of the present invention, this method comprises the following steps:

[0029] S101. Take N blocks of the same capacity of the FLASH memory, denoted as B i (0≤ii (0≤i

[0030] S102. Put B i Divide into M pieces equally, numbered b ij (0≤iij For storing a data frame, the data frame includes 8 times the number of bytes;

[0031] S103.B i where the last data frame of b ij for B i The current block of , denoted as c ij , N c ij The j varies;

[0032] S104. Judging c ij Whether j is equal to M-1, if so, go to step S105; otherwise go to step S106;

[0033] S105.B i perform erase, c ij for b i0 , and then turn to step S107;

[0034] S106.c ij for b i(j+1) ;

[0035] S107. to c ij Write data frame inside;

[0036] S108. Determine whether to end, if yes, end the operation of the FLASH memory; if not, then go to step S104.

[0037] Figure 2A to F...

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Abstract

The invention relates to an erasing and writing method for a FLASH memory. The method comprises the following steps of: A1, using N blocks with the same capacity as that of the FLASH memory, and recording as Bi, wherein i is more than or equal to 0 and less than N; B1, equally dividing the Bi into M parts, wherein the serial numbers are bij respectively, i is more than or equal to 0 and less than N, j is more than or equal to 0 and less than M, and bij is used for memorizing a data frame; C1, recording the bij, where the final data frame of the Bi is, as the current block cij, wherein j in the N cij are different from one another; D1, judging whether the j of the cij is equal to M-1 or not, if so, turning to the step E1 and otherwise, turning to the step F1; E1, executing erasion by using the Bi and turning to the step G1 when cij is bi0; F1, making cij be bi(j+1); G1, writing the data frame into the cij; and H1, judging whether the process ends up or not, and if the process does not end up, turning to the step D1. According to the technical scheme, all the conditions of memorizing program codes and user set data at the same time are optimized.

Description

technical field [0001] The invention relates to a storage medium, and more specifically, relates to a method for erasing and writing a FLASH memory. Background technique [0002] FLASH memory is an erasable and non-volatile storage element developed on the basis of EPROM and EEPROM manufacturing. It has the characteristics of high speed and low price, and has been used more and more. Both FLASH and EEPROM can save data when power is off. FLASH data is erased in units of fixed blocks. The block size is generally 256KB to 20MB, while EEPROM can be erased by a single byte. Therefore, the update speed of FLASH is faster than that of EEPROM. Both FLASH and EEPROM have a limit on the number of times of erasing and writing, but the number of times of erasing and writing of FLASH is only about 1 / 10 of that of EEPROM (in the case of comparable manufacturing process). Erasing and writing the fixed area of ​​the FLASH memory will make the area reach the service life in a short time, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/06G06F12/16
Inventor 陈恒饶丽光郑巧红
Owner SHENZHEN JIUZHOU ELECTRIC
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