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Method for extracting capacitance of interconnection structures containing redundant metal

An interconnection structure and redundant metal technology, applied in electrical digital data processing, instruments, calculations, etc., can solve the problem of difficulty in quickly and accurately extracting capacitance between metal lines, and achieve the effect of reducing the amount of calculation and speeding up the speed.

Active Publication Date: 2014-01-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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Problems solved by technology

[0007] The purpose of the present invention is to at least solve one of the above-mentioned technical problems, especially solve the problem that it is difficult to quickly and accurately extract the capacitance between metal lines in the existing circuit layout filled with redundant metal

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  • Method for extracting capacitance of interconnection structures containing redundant metal
  • Method for extracting capacitance of interconnection structures containing redundant metal
  • Method for extracting capacitance of interconnection structures containing redundant metal

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Embodiment Construction

[0016] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0017] The present invention provides a method for quickly extracting the capacitance of an interconnection structure containing redundant metals by establishing a capacitance lookup table. The method is realized through two steps: firstly, establishing a capacitance lookup table containing redundant metal interconnection structures (step A), Then for the actual circuit layout, the capacitance is extracted by querying the capacitance look-up table (step B).

[0018] figure 1 Flowchart for step A to create a capacitance look-up table wit...

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Abstract

The invention provides a method for extracting the capacitance of interconnection structures containing redundant metal quickly by establishing a capacitance lookup table, which comprises the following steps of: extracting geometric parameters of a plurality of interconnection structures, filling the redundant metal, and extracting the capacitance to establish the capacitance lookup table; and dividing construction units and extracting the geometric parameters for a circuit board drawing of which the capacitance needs extracting, and inquiring the capacitance lookup table according to the extracted unit geometric parameter of each structure to acquire the actual capacitance of the construction unit. By the method, the problems that the conventional 2.5D capacitance extraction tool cannot extract the capacitance of the interconnection structures containing the redundant metal accurately and the 3D capacitance extraction tool has long extraction time are solved. By the method, the accuracy of the extracted capacitance meets the requirement, and the time for extracting the capacitance is within the acceptable range.

Description

technical field [0001] The invention relates to the technical fields of electronic design automation and semiconductor process manufacturing, in particular to a method for quickly extracting the capacitance of an interconnection structure containing redundant metal by establishing a capacitance lookup table. Background technique [0002] In the integrated circuit (Integrated Circuit, IC) manufacturing process, various deposition methods including physical vapor deposition and chemical vapor deposition are usually used to deposit metals, dielectrics and other materials on the surface of silicon wafers to form components. layers of metal structure. A circuit usually includes a multilayer metal structure, and each layer of metal is connected by a plurality of metal-filled vias. Therefore, a critical step in the manufacturing process is to form the metal structure that connects the various layers of the circuit, making the circuit have a high complexity and circuit density. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 马天宇陈岚阮文彪李志刚叶甜春
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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