Device for manufacturing copper indium gallium selenium (CIGS) thin-film solar cells

Abstract

The invention discloses a device for manufacturing copper indium gallium selenium (CIGS) thin-film solar cells. The device comprises a sample introduction chamber, a CIGS evaporation chamber, a sample transfer chamber, a molybdenum sputtering chamber, a laser photoetching chamber, a CIGS sputtering chamber, a selenylation chamber, a zinc oxide sputtering chamber, a transition chamber and an electrochemical reaction chamber, and a isolating valve boards are arrange between the above chambers, wherein the CIGS evaporation chamber and the sample transfer chamber are in vacuum connection with the sample introduction chamber; the molybdenum sputtering chamber, the laser photoetching chamber, the CIGS sputtering chamber, the selenylation chamber and the zinc oxide sputtering chamber are in vacuum connection with the sample transfer chamber; the transition chamber is connected with the sample transfer chamber; and the electrochemical reaction chamber is connected with the transition chamber and is at normal pressure. The device for manufacturing the CIGS thin-film solar cells merges the entire CIGS thin-film solar cell manufacturing module, realizes a production line operation with glass substrate sample introduction and sampling of solar cell products. As most of the manufacturing chambers are in vacuum connection, the problems of oxidation and impurity pollution caused by exposing the samples to air in the manufacturing process are reduced or lessened, and therefore the product quality is improved.

Description

【Technical field】 [0001] The invention relates to a copper indium gallium selenium thin film solar battery preparation device. 【Background technique】 [0002] Copper Indium Gallium Selenide (Cu(In,Ga)Se 2 , referred to as CIGS) thin-film solar cells have the advantages of low cost, high efficiency, and good stability, and are recognized as the second-generation solar cells with the most development and market potential. People's research on it began in the early 1980s. After nearly 30 years of development, the theoretical research and preparation process of copper indium gallium selenium thin film solar cells have achieved gratifying results. At present, its highest laboratory photoelectric conversion efficiency has reached 20.3%, is currently the highest conversion efficiency of thin-film photovoltaic cells. [0003] The preparation method of the traditional copper indium gallium selenide thin-film battery generally includes the following steps: forming a metal back elect...

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Problems solved by technology

However, the buffer layer of the copper indium gallium selenide solar cell prepared by the above process is formed by sputtering ZnS, and ZnS itself has poor ability to form pn junctions. At present, high-efficiency cells generally use CdS buffer layer; and the above process does not include improving the battery capacity. The important laser scribing step of the open circuit voltage will inevitably lead to poor quality of processed products

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