Method for preparing copper indium gallium selenide film and photovoltaic film battery based on selenium plasma

A technology of photovoltaic thin film and copper indium gallium selenide, which is applied in the field of copper indium gallium selenide photovoltaic thin film preparation by ions, can solve the problems of high substrate temperature and impossibility of depositing copper indium gallium selenide thin film, so as to reduce the selenization temperature and material The effect of high scale accuracy

Inactive Publication Date: 2011-01-26
何整风
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to propose a method for preparing copper indium gallium selenium photovoltaic thin film and copper indium gallium selenium photovoltaic thin film battery based on selenium plasma, so as to overcome the high temperature of the substrate during deposition in the prior art method, which cannot realize Defects of CuInGaSe Thin Films Deposited on Large Area Substrates

Method used

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  • Method for preparing copper indium gallium selenide film and photovoltaic film battery based on selenium plasma
  • Method for preparing copper indium gallium selenide film and photovoltaic film battery based on selenium plasma
  • Method for preparing copper indium gallium selenide film and photovoltaic film battery based on selenium plasma

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example 1

[0062] In the present invention, the evaporation source chamber, film deposition chamber, and transition chamber are evacuated to 8×10 -4 Pa, turn on the baking system in the thin film deposition chamber, heat to 300°C, turn on the substrate holder heater to heat the substrate at a heating temperature of 350°C, and then introduce Ar gas through the gas inlet of the high-current ion source, and maintain the vacuum at 1× 10 -2 Pa, turn on the suspension bias electron gun, the crucible bias is 120V, turn on the high-current ion source, the discharge current is 60A, maintain the normal discharge of the high-current ion source, turn on the suspension bias electron gun, the acceleration voltage is DC-6KV; the beam current is 0.5A, for The selenium material is evaporated to produce selenium vapor, and the suspension crucible is connected to positive bias, so that the electron cloud generated by the working gas in the ionization process collides with the selenium vapor under the actio...

example 2

[0067] Vacuum the evaporation source chamber, thin film deposition chamber, and transition chamber to 8×10 -4 Pa, turn on the baking system in the film deposition chamber, heat to 350°C, turn on the substrate holder heater to heat the substrate at a heating temperature of 490°C, and then introduce Ar gas through the gas charging port of the high-current ion source, and maintain the vacuum at 1× 10 -2 Pa, turn on the suspension bias electron gun with a crucible bias of 150V, turn on the high-current ion source, and discharge the current at 70A, maintain the normal discharge of the high-current ion source, turn on the suspension bias electron gun, and accelerate the voltage DC-6KV; the beam current is 0.4A for The selenium material is evaporated to produce selenium vapor, and the suspension crucible is connected to positive bias, so that the electron cloud generated by the working gas in the ionization process collides with the selenium vapor under the action of the suspension c...

example 3

[0069] In the present invention, the evaporation source chamber, film deposition chamber, and transition chamber are evacuated to 8×10 -4 Pa, turn on the baking system in the film deposition chamber, heat to 50°C, turn on the substrate holder heater to heat the substrate at a heating temperature of 25°C, and then introduce Ar gas through the gas charging port of the strong current ion source, and maintain the vacuum at 2× 10 -2 Pa, turn on the suspension bias electron gun, the crucible bias is 120V, turn on the high-current ion source, the discharge current is 100A, maintain the normal discharge of the high-current ion source, turn on the suspension bias electron gun, the acceleration voltage is DC-5KV; the beam current is 0.5A, for The selenium material is evaporated to produce selenium vapor, and the suspension crucible is connected to positive bias, so that the electron cloud generated by the working gas in the ionization process collides with the selenium vapor under the a...

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Abstract

The invention discloses a method for preparing a copper indium gallium selenide film and a photovoltaic film battery based on a selenium plasma, comprising the following steps of: 1, ionizing work gas by an ion source to enable the work gas to be in a plasma state and providing the plasma in an evaporation source chamber; 2: evaporating a selenium material by using an electron gun to generate selenium stream in the evaporation source chamber; 3: enabling electron cloud generated by the work gas in the ionization process to mutually impact the selenium steam by connecting a crucible with positive bias to generate the selenium plasma; and 4. heating the plated substrate to the preset selenizing temperature and respectively evaporating copper, indium, gallium and selenide metal materials by using an evaporation source arranged in the evaporation source chamber in the selenium plasma atmosphere backpressure environment so as to deposit a copper indium gallium selenide photovoltaic film on the substrate. According to the method, the selenizing temperature of the copper indium gallium selenide film in the growing process is reduced, the ratio precision of various materials of the copper indium gallium selenide film is improved and the large-area preparation of the copper indium gallium selenide film is realized.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a method for preparing a copper indium gallium selenium photovoltaic thin film based on selenium plasma. Background technique [0002] Copper indium gallium selenide thin film solar cells have the advantages of high conversion efficiency, low cost, stable performance and large-scale industrialization, and have become one of the research hotspots in the international photovoltaic industry, and will soon become the next generation of competitive commercial thin film solar cells. Especially with the development and progress of process technology, it will become a very important direction for the development of solar cells. [0003] Copper indium gallium selenide thin film is a thin film semiconductor material made of compound copper indium gallium selenide. Its forbidden band width can be adjusted between 1.02-1.7eV (CuIn 1-x Ga X Se 2 , 0≤x≤0.3). Visible light absorption...

Claims

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Application Information

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IPC IPC(8): C23C14/32C23C14/06H01L31/18
CPCY02P70/50
Inventor 何整风傅正文
Owner 何整风
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